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Three-dimensional ferroelectric memory and manufacturing method thereof

A ferroelectric memory, three-dimensional technology, applied in semiconductor/solid-state device manufacturing, capacitors, electric solid-state devices, etc., can solve the problems of large space and unfavorable product storage density, so as to improve storage density, improve reliability, and avoid mutual short circuit Effect

Pending Publication Date: 2021-02-19
无锡舜铭存储科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The existing ferroelectric memory is usually a planar structure, and the ferroelectric memory of the planar structure occupies a large space, which is not conducive to improving the storage density of the product

Method used

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  • Three-dimensional ferroelectric memory and manufacturing method thereof
  • Three-dimensional ferroelectric memory and manufacturing method thereof
  • Three-dimensional ferroelectric memory and manufacturing method thereof

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Embodiment Construction

[0037] The content of the present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0038] In the following description, the present invention is described with reference to various examples. One skilled in the art will recognize, however, that the various embodiments may be practiced without one or more of the specific details, or with other alternative and / or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail so as not to obscure aspects of the various embodiments of the invention. Similarly, for purposes of explanation, specific quantities, materials and configurations are set forth in order to provide a thorough understanding of embodiments of the invention. However, the invention may be practiced without these specific details. Furthermore, it should be understood that the various embodiments show...

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Abstract

The invention provides a three-dimensional ferroelectric memory and a manufacturing method thereof, the ferroelectric memory comprises a memory cell array, each memory cell comprises a transistor anda three-dimensional ferroelectric capacitor connected with the transistor, each ferroelectric capacitor comprises a first electrode, a second electrode and a ferroelectric material layer located between the first electrode and the second electrode, after a ferroelectric capacitor is deposited after a deep hole structure is formed, the capacitor structure outside the deep hole structure is etched and removed in an etching mode, and an insulating protection layer is formed on a capacitor layer. The ferroelectric memory formed through the method can reduce the manufacturing difficulty, improve the insulating reliability between electrodes and improve the product performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a three-dimensional ferroelectric memory structure and a manufacturing method thereof. Background technique [0002] Ferroelectric memory uses layers of ferroelectric material to achieve non-volatility. A layer of ferroelectric material has a non-linear relationship between applied electric field and stored apparent charge, and thus can switch polarity under an electric field. Advantages of ferroelectric memory include low power consumption, fast write performance, and high maximum read / write endurance. [0003] Existing ferroelectric memories generally have a planar structure, and planar ferroelectric memories occupy a relatively large space, which is not conducive to improving the storage density of products. Contents of the invention [0004] The object of the present invention is to provide a three-dimensional ferroelectric memory and its manufacturing method...

Claims

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Application Information

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IPC IPC(8): H01L27/11507H01L27/11514H01L23/64H01L21/8246H10B53/30H10B20/00H10B53/20
CPCH01L28/40H01L28/60H01L28/91H10B99/00H10B53/20H10B53/30
Inventor 郭美澜
Owner 无锡舜铭存储科技有限公司