Epitaxial wafer applied to Micro-LED and preparation method of epitaxial wafer

Abstract

The invention relates to the technical field of semiconductors, and particularly relates to an epitaxial wafer applied to a Micro-LED and a preparation method of the epitaxial wafer. The preparation method is characterized by comprising the steps of 1, selecting a substrate; 2, sequentially growing a buffer layer, a stress and warping control layer, an N-type semiconductor layer, an active layer,an electron blocking layer and a P-type semiconductor layer on the substrate; 3, growing a contact layer on the P-type semiconductor layer; and 4, after the epitaxial growth is finished, performing annealing treatment on the epitaxial wafer, and then reducing the temperature of the epitaxial wafer to room temperature to finish the preparation. According to the invention, the warping performance and stress during bottom layer epitaxy can be effectively controlled, and the consistency of the edge yield and the center yield is effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer applied to Micro-LEDs and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate. The substrate is used to pr...

AI Technical Summary

Problems solved by technology

[0007] The low-temperature AlGaN layer is aimed at improving the lattice mismatch and stress between the substrate and GaN, and has limited adjustment for the growth and warpage of the thicker GaN bottom layer. In addition, defects and defects will be further entered during the bottom GaN epitaxy process. Stress gradually gathers to affect the stress of the quantum well region and the incorporation of indium, which has limited effect on edge yield and well stress control

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