LED epitaxial structure and preparation method thereof

Abstract

The invention provides an LED epitaxial structure and a preparation method thereof.The LED epitaxial structure sequentially comprises a buffer layer, an n-type DBR layer, a tunneling layer, a p-type semiconductor layer, an active layer and an n-type semiconductor layer from bottom to top, the buffer layer, the n-type DBR layer, the tunneling layer, the p-type semiconductor layer, the active layer and the n-type semiconductor layer are located on a substrate, and the p-type semiconductor layer comprises a p-type limiting layer and a p-type waveguide layer which are sequentially stacked; the tunneling layer comprises a doped n-type layer and a doped p-type layer which are stacked in sequence. According to the epitaxial structure, the tunneling layer is introduced between the n-type DBR layer and the p-type limiting layer, so that stress generated by lattice mismatch between the n-type DBR layer and the p-type limiting layer can be reduced, and growth warping of the epitaxial structure can be reduced; and the tunneling layer can also provide tunneling current, so that a reverse PN junction formed by the n-type DBR layer and the p-type limiting layer is conducted. In addition, the preparation method of the LED epitaxial structure is simple.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED epitaxial structure and a preparation method thereof. Background technique [0002] Light Emitting Diode (LED) is an electronic component that directly converts electrical energy into light energy by generating photons through the radiative recombination of conduction band electrons and valence band holes in semiconductor materials. LEDs have been widely used in many high-efficiency solid-state lighting fields. The traditional red LED epitaxial structure is "p-side up", that is, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially grown on an n-type GaAs substrate. For red LED chips, the GaAs substrate will strongly absorb the red light emitted by the active layer, resulting in low luminous efficiency of the red LED. In order to improve the luminous efficiency of LED, on the basis of the original structure, a DBR struct...

AI Technical Summary

Problems solved by technology

However, the p-type semiconductor layer in the semiconductor device includes a p-type DBR layer located between the tunneling layer and the p-type confinement layer, and the epitaxial preparation process of the p-type DBR layer is relatively difficult

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