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Electrostatic protection circuit

An electrostatic protection and circuit technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of protecting pads, no electrostatic protection circuit, etc.

Pending Publication Date: 2021-02-26
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for some special applications, some pads have negative voltage during normal operation, and there is no corresponding electrostatic protection circuit to protect the pads at this time

Method used

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  • Electrostatic protection circuit
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Embodiment Construction

[0021] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, various implementation modes of the present invention will be described in detail below in conjunction with the accompanying drawings. However, those of ordinary skill in the art can understand that, in each implementation manner of the present invention, many technical details are provided for readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following implementation modes, the technical solution claimed in this application can also be realized.

[0022] The first embodiment of the present invention relates to an electrostatic protection circuit 100, the specific structure is as follows figure 1 shown, including:

[0023] ESD protection module 1; input and output terminal VBBSVT, power supply terminal VDD and ground terminal VSS; ESD protection modul...

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Abstract

The embodiment of the invention relates to an electrostatic protection circuit design, and discloses an electrostatic protection circuit. The circuit comprises an electrostatic protection module; an input / output end, a power supply end and a grounding end, wherein the electrostatic protection module comprises a first NMOS transistor, a first capacitor and a first resistor; a source electrode and asubstrate of the first NMOS transistor are connected with the input and output end, and a drain electrode of the first NMOS transistor is connected with the grounding end; the first end of the firstcapacitor is connected with the grounding end, and the second end of the first capacitor is connected with the grid electrode of the first NMOS transistor; the first end of the first resistor is connected with the input and output end, and the second end of the first resistor is connected with the grid electrode of the first NMOS transistor. According to the electrostatic protection circuit disclosed by the invention, the electrostatic protection of the internal circuit can be effectively realized while the work of the internal circuit is not influenced.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to an electrostatic protection circuit. Background technique [0002] Integrated circuits are easily damaged by electrostatic discharge (ESD, electro-static discharge) during manufacturing, packaging, testing and application. ESD typically has a voltage of several thousand volts and a current of several amperes. ESD test models are usually divided into three categories. The first category is caused by the contact between human and IC. Generally, HBM (human body model) type ESD protection circuit can be made corresponding to this type of ESD. The rise time of HBM type ESD pulse is about 10ns ;The second type is caused by the contact between mechanical equipment and IC, and usually corresponding to this type of ESD, an MM (machine model) type ESD protection circuit can be made; the third type is caused by the charging of the IC itself, and its discharge can pass This type of ESD c...

Claims

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Application Information

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IPC IPC(8): H01L27/02
CPCH01L27/0266H01L27/0288H01L27/0296
Inventor 许杞安
Owner CHANGXIN MEMORY TECH INC
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