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Wide-gap semiconductor substrate, apparatus for manufacturing wide-gap semiconductor substrate, and method for manufacturing wide-gap semiconductor substrate

A technology for manufacturing a device and a manufacturing method, which is applied in the field of wide energy gap semiconductor substrates, and can solve problems such as cracks, silicon substrate cracks, and gaps.

Pending Publication Date: 2021-03-02
SUMITOMO PRECISION PROD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are problems in that cracks or chips are caused by warping of the substrate when the silicon substrate is thinned, and cracks are generated when the thinned silicon substrate is transported.

Method used

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  • Wide-gap semiconductor substrate, apparatus for manufacturing wide-gap semiconductor substrate, and method for manufacturing wide-gap semiconductor substrate
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  • Wide-gap semiconductor substrate, apparatus for manufacturing wide-gap semiconductor substrate, and method for manufacturing wide-gap semiconductor substrate

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Embodiment Construction

[0056] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0057] 1st embodiment

[0058] figure 1 (a) is a vertical sectional view of the semiconductor substrate 70 according to the first embodiment of the present invention, figure 1 (b) is a plan view of the semiconductor substrate 70 . The semiconductor substrate 70 is a wide-gap semiconductor substrate made of silicon carbide (4H-SiC) having high withstand voltage performance. Electronic components manufactured using the semiconductor substrate 70 have low power loss, and can be used as high-performance and power-saving inverter devices, power modules for home appliances, or power semiconductor components for electric vehicles.

[0059] In addition, compared with silicon, silicon carbide has a higher Young's modulus and a higher drop temperature even at high temperatures. Therefore, silicon carbide can be used as a MEMS (Micro-Electro Mechanical Systems) that has both ci...

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Abstract

Provided is a method for manufacturing a wide-gap semiconductor substrate with which a device having low power loss can be formed while maintaining high mechanical strength. This method is an etchingmethod for performing etching such that only a device-forming region of a wide-gap semiconductor substrate (W) placed on a base (15) disposed in a treatment chamber (11) is thinned by using a plasma-treated etching gas, the method including: a step for supplying an etching gas into the treatment chamber (11) and plasma-treating the etching gas; and a step for supplying a bias potential to the base(15) and performing etching such that only the device-forming region of the wide-gap semiconductor substrate (W) is thinned.

Description

technical field [0001] The invention relates to a wide-gap semiconductor substrate on which elements can be formed on the surface, a manufacturing device for the wide-gap semiconductor substrate and a manufacturing method for the wide-gap semiconductor substrate. Background technique [0002] In recent years, with the advancement of miniaturization, thinning, light weight, low loss (high efficiency), and high performance (high performance) of electronic equipment, thin semiconductor elements manufactured using thinner silicon substrates have continued to be developed. Especially for vertical power devices, the thinner the silicon substrate (wafer), the lower the loss. Therefore, it is better to use a silicon substrate with the necessary withstand voltage performance and the smallest thickness for manufacturing. Therefore, in order to manufacture a thin power device, the back surface opposite to the surface on which the organic functional layer is formed is ground, and the si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H05H1/46
CPCH05H1/46H01L21/3065H01J37/32366H01J37/32651H01J37/32642H01J37/321H01J37/32357H01J37/32972H01J2237/3343H01L21/67069H01L21/67253H01L29/0657H01L29/1602H01L29/1608H01L29/2003H01L29/24
Inventor 山本孝
Owner SUMITOMO PRECISION PROD CO LTD
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