Wide-gap semiconductor substrate, apparatus for manufacturing wide-gap semiconductor substrate, and method for manufacturing wide-gap semiconductor substrate
A technology for manufacturing a device and a manufacturing method, which is applied in the field of wide energy gap semiconductor substrates, and can solve problems such as cracks, silicon substrate cracks, and gaps.
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[0056] Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0057] 1st embodiment
[0058] figure 1 (a) is a vertical sectional view of the semiconductor substrate 70 according to the first embodiment of the present invention, figure 1 (b) is a plan view of the semiconductor substrate 70 . The semiconductor substrate 70 is a wide-gap semiconductor substrate made of silicon carbide (4H-SiC) having high withstand voltage performance. Electronic components manufactured using the semiconductor substrate 70 have low power loss, and can be used as high-performance and power-saving inverter devices, power modules for home appliances, or power semiconductor components for electric vehicles.
[0059] In addition, compared with silicon, silicon carbide has a higher Young's modulus and a higher drop temperature even at high temperatures. Therefore, silicon carbide can be used as a MEMS (Micro-Electro Mechanical Systems) that has both ci...
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