Method and device for etching silicon oxide

A technology of silicon oxide and silicon oxide film, applied in chemical instruments and methods, surface etching compositions, electrical components, etc., can solve problems such as wafer electrical damage and adverse effects of chemical solutions

Pending Publication Date: 2021-03-19
CENT GLASS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in wet etching, there is a problem that adverse effects caused by chemical solutions are likely to occur on members that are not to be etched.
In addition, in plasma etching, there is a problem of causing electrical damage to the wafer due to plasma

Method used

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  • Method and device for etching silicon oxide
  • Method and device for etching silicon oxide
  • Method and device for etching silicon oxide

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0032] In the first embodiment, the silicon oxide is etched by supplying a processing gas (dry etching gas) containing hydrogen fluoride and an organic amine compound to the etching device and bringing it into contact with the silicon oxide.

[0033] When the silicon oxide is brought into contact with a processing gas containing hydrogen fluoride and an organic amine compound, the silicon oxide, hydrogen fluoride and the organic amine compound undergo a chemical reaction to become a reaction product such as an organic amine salt of hexafluorosilicic acid. The silicon oxide is removed by sublimation to gas or thermal decomposition to gas while generating the reaction product. It should be noted that, in the present disclosure, sublimation refers not only to the case where a solid is not thermally decomposed but becomes a gas, but also sometimes includes a case where a solid is thermally decomposed and becomes a gas component.

[0034] As the processing gas, hydrogen fluoride ga...

no. 2 Embodiment approach

[0054] A second embodiment of the dry etching method of the present disclosure is a method of separately supplying a processing gas containing an organic amine compound and a processing gas containing hydrogen fluoride to an etching device to perform etching. That is, in the second embodiment, after the step of supplying the processing gas containing the organic amine compound in the silicon oxide to the etching device, the step of supplying the processing gas containing hydrogen fluoride to the etching device is performed. A vacuuming step may be performed between the above two steps.

[0055] As the above-mentioned organic amine compound, a compound represented by the general formula (1) shown in the first embodiment can be used.

[0056] It is considered that the organic amine compound is adsorbed on the surface of the silicon oxide when the organic amine is initially introduced into the etching apparatus and the silicon oxide is brought into contact with the gaseous organi...

Embodiment 1-1～1-11、 comparative example 1-1～1-8

[0078] First, wafers A to C were placed on the stage in the chamber, and after the chamber was evacuated, the temperature of the stage was set to a predetermined temperature shown in Table 1 below. After that, process gas was supplied into the chamber and maintained for 30 seconds. Thereafter, after the chamber was evacuated to 10 Pa or less and replaced with an inert gas, wafers A to C were taken out, and respective film thicknesses were measured to evaluate the amount of etching. In addition, the surface of the silicon wafer B on which the thermally oxidized film was etched was observed with an optical microscope to evaluate the presence or absence of residues on the surface.

[0079] The type of organic amine, the flow rate, the flow rate of HF, the pressure during etching, the temperature, the etching time, and the evaluation results after etching are shown in Table 1 below.

[0080] In Example 1-1, HF gas and trimethylamine gas were simultaneously supplied to the chamber...

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Abstract

The purpose of the present invention is to provide a method capable of etching silicon oxide at a sufficient speed even at a low temperature of 200 DEG C or lower without occurrence of residues, without using plasma. The present invention is a method that is for dry-etching silicon oxide and that is characterized by reacting silicon oxide with gaseous hydrogen fluoride and a gaseous organic aminecompound and / or a gaseous hydrogen fluoride salt of an organic amine compound, without undergoing a plasma state.

Description

technical field [0001] The present disclosure relates to a method of dry etching silicon oxide in a plasma-free state and an etching apparatus used for the method. Background technique [0002] In the manufacturing process of a semiconductor device, there is a step of etching a silicon oxide film present on the surface of a semiconductor wafer as a CVD-based oxide film, a thermal oxide film, or a natural oxide film. As an etching method of such a silicon oxide film, wet etching using a chemical solution and plasma etching using reactive gas plasma have been performed. [0003] However, in wet etching, there is a problem that an adverse effect by a chemical solution tends to occur on members not to be etched. In addition, plasma etching has a problem of causing electrical damage to the wafer due to plasma. [0004] In response to these problems, a method of performing dry etching without using plasma has been attempted. For example, the following methods are disclosed: for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/302
CPCH01L21/31116H01L21/67103H01L21/67069C09K13/08H01L21/02164H01L21/0217H01L21/302
Inventor 铃木圣唯八尾章史
Owner CENT GLASS CO LTD
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