37results about How to "Fully etched" patented technology

The invention provides a contact hole etching method of a CMOS (Complementary Metal Oxide Semiconductor) device and a manufacturing method of the CMOS device, which are characterized in that after a device layer is formed through a front-end process, an etching stop layer is formed on a grid electrode and an active region of the device layer, a carbon cap layer is formed on the etching stop layer, or a carbon-rich layer is formed on the surface layer of the etching stop layer through ion implantation carbon in the etching stop layer, and the carbon cap layer is formed on the surface layer of the carbon-rich layer. And forming an interlayer dielectric layer on the etching stop layer. Due to the existence of the carbon cap layer or the carbon-rich layer above the etching stop layer, when the etching stop layer with relatively shallow depth is etched, a large amount of polymer is formed in the etching stop layer, and the polymer can protect the etching stop layer to be further etched. Therefore, in the subsequent etching process of the contact hole with the relatively deep depth, the contact hole with the relatively shallow depth can be effectively protected from an over-etching phenomenon until the etching of the contact hole with the relatively deep depth is completed. Therefore, the over-etching phenomenon is avoided, the deep contact hole can be fully etched, and the phenomenon of insufficient etching is avoided.

The purpose of the present invention is to provide a method capable of etching silicon oxide at a sufficient speed even at a low temperature of 200 DEG C or lower without occurrence of residues, without using plasma. The present invention is a method that is for dry-etching silicon oxide and that is characterized by reacting silicon oxide with gaseous hydrogen fluoride and a gaseous organic aminecompound and / or a gaseous hydrogen fluoride salt of an organic amine compound, without undergoing a plasma state.

The present invention provides a resin surface etching method characterized in that, in etching a resin surface, one set of steps (a) and (b), is performed two or more times without performing a resinswelling step, wherein step (a) is a step for treating the resin surface with a solution containing an oxidizing agent and adsorbing the oxidizing agent on the resin surface, and step (b) is a step for activating the oxidizing agent adsorbed on the resin surface in step (a). This rein surface etching method provides a novel technique operable at an industrial level, as a resin etching technique that does not use a chromic acid.

The invention discloses a SAB process method of a semiconductor device, comprising steps: Step 1, forming a gate structure and a source-drain region of a semiconductor device; Step 2, determining the required thickness of the SAB film layer and combining the spacing of the polysilicon gate to adjust the SAB film The layer formation process is split: the thickness of each SAB sub-film layer ensures that no gaps are formed between the polysilicon gates; after that, the SAB sub-film layer is photolithographically etched, and the SAB sub-film in the area where metal silicide needs to be formed layer removal and achieve sufficient etching of the SAB sub-film layer between the polysilicon gates to prevent voids from appearing in the subsequent thin film formation process; the present invention can not generate between the polysilicon gates of the semiconductor device during the formation of the SAB film layer Holes, so that the SAB film layer between the polysilicon gates can be fully etched, so that the SAB process does not affect the spacing of the polysilicon gates, thereby facilitating the filling of the thin film.

The present invention relates to the technical field of sensors, in particular to a sensor monocrystalline silicon etching device with uniform etching. The lower end is sealed; the outer wall of the rotating column between two adjacent circular plates is evenly provided with a number of sliding holes of equal height, and the sliding holes are connected with the inner wall of the rotating column; the opposite surfaces of each adjacent two circular plates are uniformly There are a number of chute slots corresponding to the positions; the sliding hole is slidably connected with a clamping plate passing through the sliding hole, and the clamping plate is used to fix the monocrystalline silicon wafer; the clamping plate slides with the corresponding chute on the two adjacent ring plates Connection, the invention has the advantages of convenient use, improved etching efficiency, improved etching effect, and reduced labor intensity of workers.