33results about How to "Fully etched" patented technology

The invention relates to etching equipment, in particular to printed circuit board (PCB) etching equipment for production of an electronic display screen. The PCB etching equipment, which can be usedfor reducing labor intensity of a worker, is high in etching efficiency and is convenient to operate, for the production of the electronic display screen is provided by the invention. In order to solve the technical problem, the PCB etching equipment for the production of the electronic display screen comprises a left rack, a first pipeline, a first one-way valve, a support rod, a bottom plate, amobile device, a lifting device, a rotation device, a liquid transmission device and a second one-way valve, wherein the left rack is welded at a left side of the top of the bottom plate, and the liquid transmission device is arranged at a lower part of a right side of the left rack. By the PCB etching equipment, the rotation direction of an electric winding wheel is controlled, the effects of rapidly collecting and placing a PCB is achieved by matching of the electric winding wheel and a first spring, a rotation motor is controlled to rotate, a cam and a second spring are matched with each other, an etching liquid is stirred by rotating rotation blades, so that the PCB and the etching liquid are in full contact, and the etching efficiency is improved.

The invention relates to the technical field of sensors, in particular to a sensor monocrystalline silicon etching device capable of etching uniformly. A wafer shelf is composed of hollow cylindricalrotating columns and annular plates which are uniformly and fixedly connected with the outer walls of the rotating columns, and the lower end of the rotating column is sealed; a plurality of sliding holes with equal height are uniformly formed in the outer wall of each rotating column between every two adjacent annular plates, and the sliding holes are communicated with the inner walls of the rotating columns; a plurality of sliding chutes corresponding in position are respectively and uniformly formed in opposite surfaces of every two adjacent annular plates; each sliding hole is internally and slidably connected with a clamping plate penetrating the sliding hole, and each clamping plate is used for fixing a monocrystalline silicon wafer; and each clamping plate is slidably connected withthe sliding chutes, corresponding in the position, on the two adjacent annular plates. The sensor monocrystalline silicon etching device provided by the invention has the advantages that the device is easy to use, etching efficiency is improved, etching effect is improved and labor intensity of a worker is reduced.

The invention belongs to the technical field of production of high-purity quartz raw materials, and particularly relates to a production system and a production process of a high-purity quartz raw material. The production system of the high-purity quartz raw material comprises a raw material conveying device, a melting device, a melt cooling and conveying device, an acid pickling device, a centrifugal machine, a vacuum drying furnace and a vacuum packaging machine, and can be used for melting and purifying quartz mineral powder with the purity of 3-4N to prepare the 5-6N high-purity quartz rawmaterial. The production process comprises the following main steps: charging, heating and melting of materials, flowing out of a melt, water quenching and air cooling, transporting of water-quenchedparticles, pickling, solid-liquid separation, drying and packaging. The system and the process designed by the invention are beneficial to fully damaging the structure of the quartz mineral raw material and exposing impurities so as to be beneficial to acid pickling and impurity removal.

The invention relates to a method for removing suspension copper in a blind hole of a circuit board, belonging to the technical field of chemical industry. The method comprises the following steps of (1) respectively preparing a liquid A and a liquid B, wherein the liquid A comprises an acidic or alkaline substance and a wetting agent, and the liquid B comprise one or more of hydrogen peroxide, peroxysulphate, nitrate, hypochlorite, copper sulfate and ammonium chloride substances; (2) respectively heating the liquids obtained in the step (1) to be 20-60 DEG C; and (3) immersing a workpiece with suspension copper in the blind hole in the liquid A for 1 to 10 minutes, taking out the workpiece, dropping the liquid for several seconds, immersing the workpiece in the liquid B for 1 to 10 minutes, and finally washing and drying the workpiece. By the method, chemical etching can be carried out on the suspension copper in the blind hole, and no etching is carried out on copper outside the hole and copper at the bottom of the hole. The process is simple, economic and efficient.

The invention discloses a sensor monocrystalline silicon etching device which structurally comprises an etching mechanism, a gas source chamber, a vacuum pump and a driving motor, wherein the lower end of the gas source chamber is connected with a flange at the upper end of the etching mechanism, the vacuum pump is arranged on the right side below the gas source chamber, the driving motor is arranged on the left side below the gas source chamber, the driving motor drives a reaction chamber mechanism in the etching mechanism to rotate in a shell, the gas source chamber conveys gas through a gas supply port, the gas is conveyed into a wafer rack mechanism through a gas distribution net of the gas supply mechanism, the gas generates glow discharge under the action of an electromagnetic coil, the reaction gas and an etched material generate a chemical reaction, and the wafer rack rotates during etching, so that an etched material can be etched more sufficiently, volatile compounds which can be taken away by a gas suction mechanism are generated, chemical etching is realized, and the vacuum pump sucks the volatile compounds in the gas suction mechanism through the gas suction pipeline to reach the maximum vacuum degree.

The invention, which belongs to the field of semiconductor technology, in particular relates to a wet etching apparatus for a wafer. The wet etching apparatus is composed of a cylinder I, a cylinder II, and baffles. The cylinder II is installed inside the cylinder I coaxially. The baffles are arranged inside the cylinder I in a circumferential direction and divide the cylinder I into a sealing chamber I, a sealing chamber II, and a sealing chamber III. According to the invention, on the basis of mutual cooperation of a sliding telescopic rod II sleeved by a spring I and a spiral plate, the sliding telescopic rod II stretches and contracts during the vibration process of the spiral plate and a wafer moves; and after the displacement, a clamping unit clamps the wafer again and thus an etching solution etches the wafer uniformly. Meanwhile, etched precipitated particles are separated from the wafer based on vibration of the spiral plate, so that contact between the etching solution and the wafer is increased and thus the etching effect is improved.

The invention discloses a method for etching a silicon wafer. In the method, the silicon wafer is etched by process gas, which lower layer is an oxide layer, and the process of etching the silicon wafer is detected by a laser detector. The laser detector transmits a laser beam to an etching slot on the silicon wafer and then the lower surface of the silicon wafer and the bottom of the etching slot respectively reflect one laser beam, and thus the depth of the etching slot is analyzed by the two reflected laser beams. When the etching depth closes to the upper surface of the oxide layer or when any part of the bottom of the slot formed by etching exposes the upper surface of the oxide layer, the content of oxygen in the process gas is increased with the flow rate of oxygen of 2-50sccm in order to protect the oxide layer. Later, the process of etching can be detected by a spectrum analyzer and also estimated according to the time by experience. The invention can not only fully etch the silicon wafer but also fully protect the oxide layer beneath the silicon wafer. And the invention is especially suitable for the etching of polysilicon besides the etching of other silicon wafers.

The invention discloses a titanium chip alkaline etching and smoothing process. The titanium chip alkaline etching and smoothing process includes the steps that 1, titanium chips are put into a cleaning tank; 2, the cleaning tank is lifted into an alkaline water tank with the temperature of 55-65 DEG C and washed through alkaline cleanout fluid for 5-6 minutes under the high temperature; 3, the cleaning tank is lifted into a first clean water tank and soaked for 10-15 minutes and is lifted out for being dried in the shade for 5-8 minutes; 4, the cleaning tank is lifted into an acidity tank with the temperature of 40-50 DEG C and washed through acid fluid for 3-5 minutes under the high pressure; and 5, the cleaning tank is lifted into a second clean water tank and soaked for 10-15 minutes. The titanium chip alkaline etching and smoothing process is scientific, selected raw materials are configured scientifically, pressing stirring is conducted in the alkaline cleanout fluid preparation process, existing structures of the raw materials can be changed, molecules are dispersed, recombined and fused, alkaline etching can be fully conducted on titanium chips through the cleanout liquid, alkaline etching treatment of the titanium chips can be effectively achieved, the surfaces of the titanium chips are smooth and flat, and the separated-out precipitating amount is reduced; and the situation that an etching reaction is insufficient or severe is avoided, the titanium loss and alkaline consumption are lowered, and the produced cleanout liquid is good in stability and long in service life.

The invention relates to the field of chips, in particular to chip processing equipment sufficient in wafer etching, which comprises a box body, a supporting plate, a cleaning tank and an etching tank, the supporting plate is fixedly connected to the top end of the left side wall of the box body, the cleaning tank is mounted on the front side of an inner cavity of the box body, the etching tank is mounted on the rear side of the inner cavity of the box body, and the chip processing equipment further comprises a dustproof shell, the box body is fixedly connected to the top end of the box body; the feeding and discharging mechanism is mounted on the front side of the top end of the inner cavity of the dustproof shell; the diving mechanism is mounted at the top end of the inner cavity of the dustproof shell; the feeding and discharging mechanism comprises two first air cylinders which are installed on the left side and the right side of the top end of an inner cavity of the dustproof shell correspondingly. The top plate is mounted at the output end of the first air cylinder; and the first motor is mounted in the center of the top end of the top plate. According to the invention, automatic feeding and discharging of the wafer are realized, time and labor are saved, hand skin of a worker is prevented from being corroded, in addition, the purpose of fully etching and cleaning the wafer is achieved, the etching effect is strong, and the etching effectiveness is ensured.

The invention relates to a capacitor hole preparation method and a semiconductor device comprising a capacitor hole. The preparation method comprises the following steps: forming a first dielectric layer, a first mask layer, a first pattern layer, a second dielectric layer, a second mask layer and a second pattern layer which are stacked on a substrate; enabling the first pattern layer and the second pattern layer to enclose a grid; forming a third mask layer on the second pattern layer to cover the second mask layer in the edge region and expose the second mask layer in the middle region; etching the exposed second mask layer until the second dielectric layer is exposed; etching the exposed second dielectric layer until the first pattern layer and the first mask layer are exposed; and removing the third mask layer, etching the exposed first mask layer and the second pattern layer and the second mask layer in the edge region until the first dielectric layer is exposed, etching the exposed first dielectric layer until the etching selection ratio of the second mask layer to the first mask layer is greater than 1, and forming a capacitor hole. According to the invention, while the first mask layer in the middle area is etched, the line height of the edge area is etched and reduced.