Wet etching apparatus for wafer

A wet etching, wafer technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of technical solution limitations, wafer clamping, uniform etching, etc., to improve the etching effect and practicality, the effect of increasing the contact area

Inactive Publication Date: 2018-10-23
如东汇盛通半导体科技有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The wet etching device of the present invention can handle the precipitation in the etching process, but this t...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wet etching apparatus for wafer
  • Wet etching apparatus for wafer
  • Wet etching apparatus for wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0024]As an embodiment of the present invention, the liquid blocking module 42 includes a No. 1 slider 421, a No. 1 guide rod 422, a floating block 423, a No. 2 guide rod 424, a No. 1 sliding telescopic rod 425, and a No. 3 slider 426. and a spherical stopper 427; the floating block 423 is fixedly connected with the No. 1 slider 421 through the No. 1 guide rod 422; the No. 1 slider 421 slides on the No. 1 chute 41; the slider 423 below is provided with three No. slider 426; No. 2 chute 428 is provided in the No. 3 slider 426; One end of No. 2 guide rod 424 is connected with floating block 423; The other end of No. 2 guide rod 424 is provided with No. 2 slider 429 , which is used to drive the movement of No. 3 slider 426; said No. 3 slider 426 is fixedly connected with spherical stopper 427 through one end of No. 1 sliding telescopic rod 425, and the other end of No. 1 sliding telescopic rod 425 is connected with No. The wall is fixedly connected; the spherical stopper 427 is u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention, which belongs to the field of semiconductor technology, in particular relates to a wet etching apparatus for a wafer. The wet etching apparatus is composed of a cylinder I, a cylinder II, and baffles. The cylinder II is installed inside the cylinder I coaxially. The baffles are arranged inside the cylinder I in a circumferential direction and divide the cylinder I into a sealing chamber I, a sealing chamber II, and a sealing chamber III. According to the invention, on the basis of mutual cooperation of a sliding telescopic rod II sleeved by a spring I and a spiral plate, the sliding telescopic rod II stretches and contracts during the vibration process of the spiral plate and a wafer moves; and after the displacement, a clamping unit clamps the wafer again and thus an etching solution etches the wafer uniformly. Meanwhile, etched precipitated particles are separated from the wafer based on vibration of the spiral plate, so that contact between the etching solution and the wafer is increased and thus the etching effect is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a wafer wet etching device. Background technique [0002] Semiconductor technology refers to various technologies of semiconductor processing, including wafer growth technology, thin film deposition, photolithography, etching, doping technology and process integration and other technologies. At present, in the semiconductor manufacturing process, wet etching usually puts the wafer with silicon dioxide and silicon nitride in the etching tank to etch the wafer, and the etching tank is often loaded with phosphoric acid solution. Phosphoric acid is widely used in the etching of silicon nitride films because of the etching selectivity ratio of silicon nitride films to silicon dioxide. [0003] In the prior art, there are also technical solutions for wet etching devices. For example, a Chinese patent with application number 201420593668.7 discloses a wet etching device, includi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/67
CPCH01L21/67075
Inventor 王青江振
Owner 如东汇盛通半导体科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap