Sensor monocrystalline silicon etching device

Abstract

The invention discloses a sensor monocrystalline silicon etching device which structurally comprises an etching mechanism, a gas source chamber, a vacuum pump and a driving motor, wherein the lower end of the gas source chamber is connected with a flange at the upper end of the etching mechanism, the vacuum pump is arranged on the right side below the gas source chamber, the driving motor is arranged on the left side below the gas source chamber, the driving motor drives a reaction chamber mechanism in the etching mechanism to rotate in a shell, the gas source chamber conveys gas through a gas supply port, the gas is conveyed into a wafer rack mechanism through a gas distribution net of the gas supply mechanism, the gas generates glow discharge under the action of an electromagnetic coil, the reaction gas and an etched material generate a chemical reaction, and the wafer rack rotates during etching, so that an etched material can be etched more sufficiently, volatile compounds which can be taken away by a gas suction mechanism are generated, chemical etching is realized, and the vacuum pump sucks the volatile compounds in the gas suction mechanism through the gas suction pipeline to reach the maximum vacuum degree.

Description

technical field [0001] The invention relates to the field of sensors, in particular to a sensor single crystal silicon etching device. Background technique [0002] During the processing of monocrystalline silicon for sensors, it needs to be etched; in the existing etching process, it is often done by stacking multiple monocrystalline silicon A reactive gas is introduced into the position, and the reactive gas is made to generate plasma in an electric field environment, so as to etch the single crystal silicon. [0003] The existing etching device uses a straight cylindrical reaction vessel, and the electric field generated by the electromagnetic coil cooperates with the reaction gas to etch the monocrystalline silicon. During the processing, the chip holder usually needs to be rotated during etching to increase The contact with the plasma is uniform. However, in the current etching process, the distance between the coils on the etching device is fixed and cannot be adjuste...

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Problems solved by technology

[0003] The existing etching device uses a straight cylindrical reaction vessel, and the electric field generated by the electromagnetic coil cooperates with the reaction gas to etch the monocrystalline silicon. During the processing, the chip holder usually needs to be rotated during etching to increase The contact with the plasma is uniform. However, in the current etching process, the distance between the coils on the etching device is fixed and cannot be adjusted. The gas is uniform, which will lead to uneven etching of the sensor monocrystalline silicon on the chip frame. After the etching is completed, some sensor monocrystalline silicon has not been fully etched.

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