Sensor monocrystalline silicon etching device capable of etching uniformly

Abstract

The invention relates to the technical field of sensors, in particular to a sensor monocrystalline silicon etching device capable of etching uniformly. A wafer shelf is composed of hollow cylindricalrotating columns and annular plates which are uniformly and fixedly connected with the outer walls of the rotating columns, and the lower end of the rotating column is sealed; a plurality of sliding holes with equal height are uniformly formed in the outer wall of each rotating column between every two adjacent annular plates, and the sliding holes are communicated with the inner walls of the rotating columns; a plurality of sliding chutes corresponding in position are respectively and uniformly formed in opposite surfaces of every two adjacent annular plates; each sliding hole is internally and slidably connected with a clamping plate penetrating the sliding hole, and each clamping plate is used for fixing a monocrystalline silicon wafer; and each clamping plate is slidably connected withthe sliding chutes, corresponding in the position, on the two adjacent annular plates. The sensor monocrystalline silicon etching device provided by the invention has the advantages that the device is easy to use, etching efficiency is improved, etching effect is improved and labor intensity of a worker is reduced.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a sensor single crystal silicon etching device with uniform etching. Background technique [0002] During the processing of monocrystalline silicon for sensors, it needs to be etched; in the existing etching process, it is often done by stacking multiple monocrystalline silicon Introduce the reactive gas at the position, and make the reactive gas generate plasma in the electric field environment to etch the single crystal silicon; the rack usually needs to be rotated during the etching process to increase the contact uniformity between the single crystal silicon and the plasma However, in the current etching process, the single crystal silicon wafers are stacked on the frame. During the etching process of the stacked single crystal silicon wafers, it will cause only a single Effective etching is performed on one side, and the etching effect on the other side is poor, which reduc...

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Problems solved by technology

[0003] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a sensor single crystal silicon etching device with uniform etching, which is used to solve the problem that only one side of the sensor single crystal silicon can be etched. Efficient etching, poor etching effect and low etching efficiency on the other side

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