Unlock instant, AI-driven research and patent intelligence for your innovation.

Membrane with reduced particle formation

A particle and surface technology, which is applied in the field of membranes to reduce particle formation, and can solve problems such as particle shedding and filter efficiency reduction.

Pending Publication Date: 2021-04-02
ENTEGRIS INC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the dip casting process can result in the formation of particles or beads on the open side of the membrane
Particles are not always removed during cleaning of membranes / filters, and during use of filters incorporating membranes, particles can be shed, reducing the efficiency of the filter

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Membrane with reduced particle formation
  • Membrane with reduced particle formation
  • Membrane with reduced particle formation

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0060] A polyethersulfone membrane was formed by creating a solution containing 13.9 wt% polyethersulfone, 45.5 wt% n-methylpyrrolidone, and 40.6 wt% propionic acid. Cast the solution on a surface covered with a hydrophobic membrane A's mobile belt. The solution was passed through an immersion water bath at a temperature of about 25°C. The formed membrane is asymmetric and has a hydrophobic A The tight side of the film and the contact hydrophobic A The open side of the film. figure 2 It is a picture of the opening-side surface of the film taken at a magnification of 5,000 with a SEM (scanning electron microscope).

example 2

[0062] Polyethersulfone membranes were formed using the same method as in Example 1, except that the solution was cast on a 462 film on the moving belt. The formed membrane is asymmetric and has a tight side facing away from the hydrophilic membrane and an open side touching the hydrophilic membrane. Unexpectedly, the open side of the film had an imperfect skin with a thickness of about 0.5 microns. Figure 3A It is a picture of the opening-side surface of a film having a surface layer taken with a SEM at a magnification of 10,000. It can be seen that there are pores on the surface of the surface layer. Figure 3B is a cross-sectional view of the open side of the membrane showing the surface layer taken with SEM at a magnification of 10,000. Surface layers are shown at the bottom of the picture. Figure 3Cis a picture of the tight side surface of the membrane taken with a SEM at a magnification of 10,000. Figure 3D is a cross-sectional view of the tight side of the memb...

example 3

[0064] Polyethersulfone membranes were formed using the same method as in Example 2, except that the solution was cast on a hydrophilic film covered with 15.5 wt% polyethersulfone, 44.4 wt% n-methylpyrrolidone, and 40.1 wt% propionic acid. of 462 film on the drum. The formed membrane is asymmetric and has a tight side facing away from the hydrophilic membrane and an open side touching the hydrophilic membrane. Unexpectedly, the open side of the membrane had a skin layer with a thickness of about 0.5 microns. Such as Figure 4A as shown in Figure 4A It is a picture of the opening-side surface of a film having a surface layer taken with a SEM at a magnification of 10,000. It can be seen that there are pores on the surface of the surface layer. Figure 4B is a cross-sectional view of the open side of the membrane showing the surface layer taken with SEM at a magnification of 10,000. The surface layer is shown at the bottom of the picture. Figure 4C is a picture of the t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The application relates to a membrane with reduced particle formation. Disclosed herein is the membrane having a first surface, a second surface opposing the first surface, a skin at the first surfacehaving visible pores when viewed at a magnification of 10,000 and a pore size gradient, wherein pore size increases from the second surface to the skin.

Description

technical field [0001] The present disclosure generally relates to films having reduced particle formation on a surface opposite a support during formation. Background technique [0002] The semiconductor industry relies on wet etching and cleaning processes to produce wafers. Liquids used in wet etching and cleaning processes are filtered to remove micro-contaminants from the liquids. In some embodiments, these wet etching and cleaning applications require filters with membranes that can deliver a minimum flow rate of 10 liters per minute of filter media. Such high flow rates require a minimum throughput in the range of 2,000 LMH / bar ((litres / square meter / hour) / bar). Suitable membranes to meet flow rate and flux requirements include dip cast polymeric membranes, such as polysulfone type membranes. However, the dip casting process can result in the formation of particles or beads on the open side of the membrane. Particles are not always removed during cleaning of the me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B01D69/00B01D71/68B01D71/60B01D71/64B01D71/34B01D65/10B01D67/00
CPCB01D69/00B01D71/68B01D71/60B01D71/64B01D71/34B01D65/104B01D67/0013B01D69/107B01D65/10B01D71/481B01D2323/08B01D2325/022B01D69/02B01D2325/04B01D69/1213B01D71/641B01D2325/36B01D2323/46
Inventor S·博尼亚迪
Owner ENTEGRIS INC