Integrated semiconductor device

A semiconductor and device technology, applied in the field of integrated semiconductor devices, can solve problems such as increasing manufacturing procedures, achieve the effects of improving quality, avoiding reverse narrow channel effects, and saving process steps

Active Publication Date: 2021-04-02
晶芯成(北京)科技有限公司
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] In the manufacture of static memory, due to the unreasonable setting of the active area and the gate width, when implanting ions in the active area, in order to reach the set channel turn-on voltage, it is necessary to perform multiple ion implantations on the active area, and then It is necessary to increase the mask, reprint ion, and increase the manufacturing process

Method used

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Embodiment Construction

[0037]Next, the technical solutions in the embodiments of the present invention will be apparent from the embodiment of the present invention, and it is clearly described, and it is understood that the described embodiments are merely embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, those of ordinary skill in the art will belong to the scope of the present invention in the scope of the present invention without any other embodiments obtained without creative labor.

[0038]The present invention provides an integrated semiconductor device, the semiconductor integrated device is a static random access memory, and the equivalent circuit diagram of the static random access memory is asfigure 1 As shown, two driving transistors, first driving transistors PD1, and second drive transistors PD2, two load transistors, first load transistors PU1 and second load transistors PU2, two transmission transistors, first transmission tr...

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Abstract

The invention discloses an integrated semiconductor device. The device comprises a substrate which comprises a plurality of different types of well regions which are arranged side by side, and each well region comprises: one or more active regions; a plurality of semiconductor elements which are formed on the active region; a gate layer which is electrically connected to the semiconductor element;a first metal layer which is formed on the gate layer; a second metal layer which is formed on the first metal layer; and a word line layer which is formed on the second metal layer, wherein the distance between the adjacent active regions in the same well region and the distance between the active regions and the boundary of the well region are greater than or equal to the width of the active regions. Through the integrated semiconductor device provided by the invention, manufacturing procedures can be reduced.

Description

Technical field[0001]The present invention belongs to the semiconductor technology, and it is particularly related to an integrated semiconductor device.Background technique[0002]Static Random-Access Memory, SRAM is one of integrated semiconductor devices. The so-called "static" means that such a memory is only maintained, and the data stored can be kept constantly. The static memory includes a plurality of components, typically including driving transistors, load transistors, and transmission transistors.[0003]In the manufacture of static memory, since the setting of the active region and the gate width is unreasonable, it is necessary to reach the set channel on the ion when an active region is injected, and a plurality of ion implants are required to reach the active region. It is necessary to increase the mask, make up ions, and increase manufacturing procedures. And since the word line layer is set is unreasonable, it is necessary to increase the metal layer on the uppermost me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11
CPCH10B10/12
Inventor 孟娟许春龙杨宗凯陈信全
Owner 晶芯成(北京)科技有限公司
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