Semiconductor glaze layer sintering method for improving matching degree of semiconductor part and central electrode

Abstract

The invention relates to the technical field of sintering, and particularly discloses a semiconductor glaze layer sintering method for improving the matching degree of a semiconductor part and a central electrode, which is used for sintering a semiconductor glaze layer on a porcelain tube, and is characterized by comprising the following steps of: manufacturing a central electrode wax mold according to the shape and size of the central electrode, and matching the porcelain tube with the central electrode wax mold; and injecting pre-prepared semiconductor enamel into a contact gap between the outer conical surface of the central electrode and the inner conical surface of the porcelain tube, and after the semiconductor enamel is naturally cooled, putting the semiconductor enamel into a furnace for heating and sintering. According to the semiconductor glaze layer sintered by the semiconductor glaze layer sintering method, the matching degree of the semiconductor part and the central electrode can be improved, so that the increase of insulation resistance between the central electrode and the semiconductor part due to poor matching degree of the central electrode and the semiconductor part is avoided, and the ignition performance of the sparking plug is improved.

Description

technical field [0001] The invention relates to the technical field of sintering, in particular to a method for sintering a semiconductor glaze layer to improve the matching degree between a semiconductor component and a central electrode. Background technique [0002] The aircraft engine ignition system relies on the high-energy pulsating voltage emitted from the ignition device, which is transmitted to the center electrode of the ignition nozzle through the ignition cable, and the center electrode of the ignition nozzle discharges to the side electrode through the semiconductor component, breakdown the surrounding air, and generates high-energy electricity. The spark ignites the fuel-air mixture in the engine, thus starting the aeroengine. [0003] The degree of cooperation between the center electrode and the semiconductor components is an important factor affecting the discharge performance of the nozzle. When the center electrode and the semiconductor components have a ...

AI Technical Summary

Problems solved by technology

During the sintering process, the glaze layer is easy to flow before it is cured, forming irregular glaze nodules, resulting in uneven glaze layer, and the fired semiconductor glaze layer is high in hardness and brittle, and it is difficult to remove it by grinding, resulting in The semiconductor part and the center electrode do not fit tightly

When the fit between the center electrode and the semiconductor component is not tight, there are some tiny "gap" in the contact part between the semiconductor component and the center electrode, and the existence of these "gap" will increase the insulation resistance from the center electrode to the side electrode, The result of the increase in insulation resistance is that a larger breakdown voltage is required, resulting in that when the pulse of a given voltage from the ignition device is transmitted to the discharge end of the ignition tip, it cannot be effectively ignited

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