Semiconductor glaze layer sintering method for improving matching degree of semiconductor part and central electrode
A technology of center electrode and sintering method, which is applied to spark gap parts, circuits, electrical components, etc., can solve the problems of loose fit between semiconductor components and center electrodes, increased insulation resistance, uneven glaze layer, etc., to avoid the fit The effect of poor temperature, improved ignition performance, and little difficulty in operation
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- Publication Date
- 2021-04-06
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Abstract
Description
technical field
[0001] The invention relates to the technical field of sintering, in particular to a method for sintering a semiconductor glaze layer to improve the matching degree between a semiconductor component and a central electrode. Background technique
[0002] The aircraft engine ignition system relies on the high-energy pulsating voltage emitted from the ignition device, which is transmitted to the center electrode of the ignition nozzle through the ignition cable, and the center electrode of the ignition nozzle discharges to the side electrode through the semiconductor component, breakdown the surrounding air, and generates high-energy electricity. The spark ignites the fuel-air mixture in the engine, thus starting the aeroengine.
[0003] The degree of cooperation between the center electrode and the semiconductor components is an important factor affecting the discharge performance of the nozzle. When the center electrode and the semiconductor components have a ...
Examples
Embodiment 1
[0024] The semiconductor glaze layer 300 sintering method for improving the matching degree of the semiconductor component and the central electrode is to firstly make the central electrode wax mold 200 according to the shape and size of the central electrode, then fit the porcelain tube 100 with the central electrode wax mold 200, and connect the outer cone surface of the central electrode with the central electrode wax mold 200. The pre-configured semiconductor enamel is injected into the interstices of the inner conical surfaces of the porcelain tube 100. After the semiconductor enamel cools naturally, it is placed on the high-alumina tiles, and the high-alumina tiles placed on the porcelain tube 100 are placed on the high-alumina tiles at a rate of one piece every 15 minutes. The aluminum tiles are sent into a high temperature furnace for sintering.
[0025] Among them, 38-40 parts of potassium feldspar, 42-44 parts of quartz, 7-8 parts of kaolin, 3-4 parts of magnesium car...