Unlock instant, AI-driven research and patent intelligence for your innovation.

Single crystal wafer thickness detection equipment

A technology of thickness detection and single wafer, which is applied in sorting and other directions, can solve the problems of reducing the efficiency of single wafer detection, and achieve the effects of simple structure, improved efficiency, and reduced labor intensity

Inactive Publication Date: 2021-04-09
南京誉生缘商贸有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At the present stage, for the detection of the thickness of a single wafer semiconductor, it is usually necessary to place the single wafer in an optical inspection machine, and then use the instrument for inspection, and then manually classify the qualified and unqualified wafers, which reduces the cost of single wafers. Wafer detection efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single crystal wafer thickness detection equipment
  • Single crystal wafer thickness detection equipment
  • Single crystal wafer thickness detection equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Combine below Figure 1-9 The present invention is described in detail, wherein, for the convenience of description, the orientations mentioned below are defined as follows: figure 1 The up, down, left, right, front and back directions of the projection relationship itself are the same.

[0024] combined with Figure 1-9 The described device for detecting the thickness of a single wafer comprises a detection device 10, the detection device 10 is also provided with a detection mechanism 85 for detecting the thickness of a single wafer, and the detection device 10 is also provided with a power supply for the device. A driving mechanism 86, an auxiliary mechanism 87 for conveying a single wafer is also provided in the detection device 10, and the detection mechanism 85 includes a working chamber 18 that is also provided in the detection device 10, and the lower cavity of the working chamber 18 is A falling chamber 69 is also provided in the wall, and a telescopic chamber...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses single crystal wafer thickness detection equipment which comprises a detection device, a detection mechanism for detecting the thickness of a single crystal wafer is further arranged in the detection device, a driving mechanism for providing power for the detection device is further arranged in the detection device, and an auxiliary mechanism for conveying the single crystal wafer is further arranged in the detection device. The single crystal wafer thickness detection equipment is simple in structure and convenient to operate, when the device is in normal use, a worker firstly places the device on a horizontal table top, then places single crystal wafers in the device one by one, then the device can automatically detect the thickness of the single crystal wafers, and when the thickness of the single crystal wafers is in a qualified detection interval range, the device can automatically place qualified single crystal wafers together, if the thickness of the single crystal wafers is out of the interval range, the single crystal wafers are unqualified, and at the moment, the single crystal wafers are placed in an unqualified area in a unified mode, so that the efficiency of single crystal wafer thickness measurement and single crystal wafer screening is improved, and the labor intensity of workers is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor design, in particular to a device for detecting the thickness of a single wafer. Background technique [0002] In daily life, a semiconductor refers to a material whose conductivity is between a conductor and an insulator at room temperature, and semiconductors are used in integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting, high-power power conversion and other fields, such as diodes. Devices made of semiconductors; [0003] At the present stage, for the detection of the thickness of a single wafer semiconductor, it is usually necessary to place the single wafer in an optical inspection machine, and then use the instrument for inspection, and then manually classify the qualified and unqualified wafers, which reduces the cost of single wafers. Wafer detection efficiency. Contents of the invention [0004] The technical problem to be solved by t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B07C5/04B07C5/36
CPCB07C5/04B07C5/362
Inventor 韦沭
Owner 南京誉生缘商贸有限公司