Cutting method of large-size silicon wafer

Abstract

The invention belongs to the technical field of solar energy, and relates to a cutting method of a large-size silicon wafer, which comprises the following steps of removing the head and the tail of a single crystal rod, cutting the single crystal rod into a plurality of cubic crystal rods along the axis direction of the single crystal rod, and ensuring that the side lengths of at least two sides of each cubic crystal rod are the same as those of other cubic crystal rods; and slicing the cubic crystal rods along the side with the side length different from that of other cubic crystal rods, and cutting the cubic crystal rods into rectangular silicon wafers. The invention provides the method for producing the large-size silicon wafer by using the small furnace profile, so that the large-size silicon wafer can be produced by various furnace profiles, the size is flexible and adjustable, and the silicon material utilization rate of a silicon rod is improved.

Description

technical field

[0001] The invention belongs to the technical field of solar energy and relates to a method for cutting large-sized silicon chips. Background technique

[0002] At present, modules in the industry are constantly developing towards higher power. In addition to the improvement of battery efficiency and module packaging technology, on the other hand, the size of silicon wafers is also continuously upgraded to support higher power and lower cost module products. The size of silicon wafers has been upgraded from the initial 125mm to 156mm and 158mm, and has been upgraded to 163mm and 166mm since 2018. It has even begun to be developed to 182mm and 210mm-230mm since 2019. The entire industry chain has been continuously upgraded, and the resulting problems are , The production capacity of old equipment is constantly being eliminated. In order to pull larger ingots to obtain larger silicon wafers, the single crystal furnace has been continuously upgraded from 80 to ...

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