Cutting method of large-size silicon wafer

A cutting method, large-scale technology, applied in the field of solar energy, can solve problems such as high cost

Pending Publication Date: 2021-04-13
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Even if the 140-type furnace produces 210mm crystal ingots, it wil...

Method used

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  • Cutting method of large-size silicon wafer
  • Cutting method of large-size silicon wafer
  • Cutting method of large-size silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Single-wafer rods are obtained by the Czochralski method, and the heads and tails of the single-wafer rods are removed, such as figure 1 As shown, when the effective diameter of the single wafer rod is greater than one time of the target silicon wafer width d and less than or equal to three times the target silicon wafer width d, the round rod is cut into three cubic square rods, and the larger cubic crystal The length of one side of the rod is d, the length of the other side is h1, the depth of the cube along the longitudinal axis of the ingot is l, and the other two relatively small cubes, the length of one side is d, the length of the other side is h2, and the cube is along the longitudinal axis of the ingot The depth in the direction is l, and the whole silicon round rod is cut into three cubic ingots with length l in the longitudinal direction. After the cubic ingot is prepared, it is cut into rectangular silicon wafers along the side lengths h1 and h2, where the w...

Embodiment 2

[0026] When the effective diameter of the single wafer rod is greater than twice the target silicon wafer width d and less than three times the target silicon wafer width d, the single wafer rod is obtained by the Czochralski method, and the head and tail of the single wafer rod are removed, such as figure 2 As shown, the single wafer rod is cut longitudinally along the axial direction, and the round rod is cut into 6 cubic crystal rods, of which 2 larger cubic crystal rods have one side with a length of d and one side with a length of h1, and the cube is along the The depth in the direction of the longitudinal axis of the ingot is l; the other two relatively small cubes have a length of d on one side and a length of h2 on the other side, and the depth of the cube along the longitudinal axis of the single wafer rod is l; there are two other relatively small cubes A cube with one side length d and one side length h3, the depth of the cube along the longitudinal axis of the sing...

Embodiment 3

[0028] A single wafer rod is obtained by the Czochralski method, and the head and tail of the single wafer rod are removed. When the effective diameter of the single wafer rod is greater than three times the width d of the target silicon wafer, such as image 3 As shown, the round rod is cut into 5 cubic crystal rods, one of which has a dimension of one side length d and one side length h1, and the depth of the cube along the longitudinal axis of the single wafer rod is l; The length is d, the length of one side is h2, the depth of the cube along the longitudinal axis of the ingot is l; the length of the remaining two sides is d, the length of one side is h3, and the depth of the cube along the longitudinal axis of the ingot is l; The silicon round rod is cut into five cubes with a length l in the longitudinal direction. After the cubic crystal ingot is prepared, it is cut into rectangular silicon wafers along the sides with lengths of h1, h2 and h3 respectively, wherein the w...

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Abstract

The invention belongs to the technical field of solar energy, and relates to a cutting method of a large-size silicon wafer, which comprises the following steps of removing the head and the tail of a single crystal rod, cutting the single crystal rod into a plurality of cubic crystal rods along the axis direction of the single crystal rod, and ensuring that the side lengths of at least two sides of each cubic crystal rod are the same as those of other cubic crystal rods; and slicing the cubic crystal rods along the side with the side length different from that of other cubic crystal rods, and cutting the cubic crystal rods into rectangular silicon wafers. The invention provides the method for producing the large-size silicon wafer by using the small furnace profile, so that the large-size silicon wafer can be produced by various furnace profiles, the size is flexible and adjustable, and the silicon material utilization rate of a silicon rod is improved.

Description

technical field [0001] The invention belongs to the technical field of solar energy and relates to a method for cutting large-sized silicon chips. Background technique [0002] At present, modules in the industry are constantly developing towards higher power. In addition to the improvement of battery efficiency and module packaging technology, on the other hand, the size of silicon wafers is also continuously upgraded to support higher power and lower cost module products. The size of silicon wafers has been upgraded from the initial 125mm to 156mm and 158mm, and has been upgraded to 163mm and 166mm since 2018. It has even begun to be developed to 182mm and 210mm-230mm since 2019. The entire industry chain has been continuously upgraded, and the resulting problems are , The production capacity of old equipment is constantly being eliminated. In order to pull larger ingots to obtain larger silicon wafers, the single crystal furnace has been continuously upgraded from 80 to ...

Claims

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Application Information

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IPC IPC(8): B28D5/04
CPCB28D5/045
Inventor 陈雪张舒高纪凡王乐
Owner TRINA SOLAR CO LTD
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