Method for improving bevel etching yield

A yield and slope technology, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of wafer yield reduction, backsplash, damage to the film layer, etc., and achieve wafer yield improvement and injection position. The effect of precision and improved wafer yield

Pending Publication Date: 2021-04-13
UNITED MICROELECTRONICS CENT CO LTD
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  • Abstract
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Problems solved by technology

When the chemical solution touches the film layer at the edge of the wafer, it will splash back, which will damage the

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  • Method for improving bevel etching yield
  • Method for improving bevel etching yield

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[0024]The technical solutions in the specific embodiments of the present invention will be described below, apparent, as described herein is merely examples of the embodiments of the invention, not all of the embodiments. Based on the embodiments of the present invention, there are all other embodiments obtained without making creative labor without making creative labor premises.

[0025]The embodiment of the present invention provides a method of improving the abbrevation of the beveled etched, and the structure thereof should be referred tofigure 1 The wafer 1 of a film layer 2 is provided, and the film layer 2 covers the upper surface of the entire wafer 1 in the present embodiment. Since the portion of the film layer in the edge region 202 of the wafer is not good, it is necessary to Working etching. The etching apparatus in the present embodiment is, for example, a first nozzle 3, which is located above the edge region 202 of the wafer 1, and is at a certain angle in the vertical...

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Abstract

The invention discloses a method for improving bevel etching yield, which belongs to the technical field of semiconductor manufacturing, and comprises the following steps of 1, providing a wafer with a film layer, 2, rotating the wafer, and spraying deionized water to a film layer which takes the center of the wafer as a circle center and is not greater than 80% of the radius of the wafer to form a water-based protective film, and 3, spraying a chemical solution to the film layer in the edge area of the wafer for etching until the film layer in the edge area of the wafer is etched cleanly. According to the method for improving the bevel etching yield provided by the invention, the damage of chemical solution back-splashing to the film layer in the central area of the wafer when bevel etching is carried out on the film layer in the edge area of the wafer can be reduced, so that the yield of the wafer after bevel etching is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a method for improving the yield rate of bevel etching. Background technique [0002] In the complementary metal oxide film semiconductor (CMOS) process flow, the deposition of part of the film layer is completed by chemical vapor deposition (CVD). The film layer deposited by CVD can be deposited on one side, and the film is deposited on the surface of the wafer to be deposited. layer, no film layer will be deposited on the surface of the wafer that does not need to be deposited. However, the CVD deposited film also has disadvantages. The film deposited on the edge of the wafer is relatively poor in quality and slightly warped, and peeling defects are prone to occur in subsequent processes. In order to prevent the occurrence of lift-off defects, the film layer in the edge area of ​​the wafer is usually bevel etched after the film layer is deposited by CVD. ...

Claims

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Application Information

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IPC IPC(8): H01L21/311H01L21/3213H01L21/67
CPCH01L21/31144H01L21/32139H01L21/6708
Inventor 吕相林
Owner UNITED MICROELECTRONICS CENT CO LTD
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