Supercharge Your Innovation With Domain-Expert AI Agents!

Semiconductor device and preparation method thereof

A technology for semiconductors and devices, applied in the field of semiconductor devices and their preparation, can solve the problems of reducing the resistance uniformity of resistive memory, reducing the reliability of resistive memory, and inability to apply computing, etc.

Pending Publication Date: 2021-04-20
XIAMEN IND TECH RES INST CO LTD
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] figure 1 The bottom electrode 101 of the shown resistive variable memory is a flat plate structure, so that the position of the region where the conductive filaments are formed in the resistive variable layer 102 cannot be predicted, which reduces the uniformity of the resistance of the resistive variable memory, thereby reducing the resistance of the resistive variable memory. Reliability, so that it cannot be applied to computing in memory (Computing in Memory, CIM)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0065] Another embodiment of the present invention also provides a method for preparing a semiconductor device, such as Figure 8 shown, including:

[0066] Step S401: Depositing a bottom electrode layer material on a semiconductor substrate to form a bottom electrode layer, the bottom electrode layer having a bottom electrode perpendicular to the upper surface of the semiconductor substrate;

[0067] Step S402: Depositing a resistive variable layer material and a top electrode material on the bottom electrode layer, and patterning the resistive variable layer material and top electrode material to form a resistive variable layer and a top electrode.

[0068] Step S403: Deposit an oxygen barrier protective layer material on the surface of the resistive switch layer and the top electrode, and etch the oxygen barrier protective layer material by using a sidewall etching method to form a layer covering the resistive switch layer and the sidewall of the top electrode oxygen barri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor device and a preparation method thereof. The semiconductor device comprises a semiconductor substrate and a bottom electrode layer located on the semiconductor substrate, a bottom electrode perpendicular to the upper surface of the semiconductor substrate is arranged in the bottom electrode layer, a resistance change layer positioned on the bottom electrode layer, a top electrode positioned on the resistance layer, and an oxygen isolation protection layer covering the resistance layer and the side wall of the top electrode.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a preparation method thereof. Background technique [0002] As a new type of non-volatile memory, RRAM (Resistive Random Access Memory) has the advantages of simple structure, fast working speed, low power consumption and stable information, and is a strong competitor of the next generation of non-volatile memory. one. [0003] figure 1 It is a structural schematic diagram of an existing resistive variable memory, which includes a semiconductor substrate 10, and a bottom electrode 101, a resistive variable layer 102, and a top electrode 103 stacked on the semiconductor substrate 10 from bottom to top. , the resistive layer 102 with resistive effect undergoes mutual conversion between resistance states (high resistance state and low resistance state) under the action of an applied voltage, forming binary information storage of "0" state and "1" ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L45/00
Inventor 邱泰玮单利军沈鼎瀛
Owner XIAMEN IND TECH RES INST CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com