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Semiconductor device and method of forming the same

A technology of semiconductors and devices, which is applied in the field of semiconductor devices and their formation, can solve problems such as the difficulty of accurately measuring the thickness of mass-loaded layers, and achieve the effect of improving flexibility and avoiding interference

Active Publication Date: 2021-06-04
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a semiconductor device and its forming method to solve the problem that the thickness of the mass-loading layer of the semiconductor device prepared by the existing technology is difficult to measure accurately

Method used

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  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same

Examples

Experimental program
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Embodiment 1

[0042] In step S100, specifically refer to image 3 As shown, a substrate 100 is provided, and there is at least one resonant region on the substrate 100, and the resonant region is a region for forming a resonant structure. In this embodiment, only two resonant regions are shown as examples for explanation, for example image 3 As shown, the substrate 100 has a first resonant region 100A and a second resonant region 100B.

[0043] Wherein, the substrate 100 can be correspondingly adjusted according to the specific application of the formed semiconductor device. For example, the semiconductor device can be a bulk acoustic wave filter (bulk acoustic wave, BAW), at this time, the substrate can include multiple Bragg reflection layers to further form a solid-state mounted resonator (SMR); or, the substrate can also include The cavity is used to further form a film bulk acoustic resonator (FBAR).

[0044] In this embodiment, the formation of a thin film bulk acoustic resonator fi...

Embodiment 2

[0079] The difference from Embodiment 1 is that in this embodiment, the metal ring 240 is formed on the upper electrode layer 230 . specific reference Figure 9 As shown, the metal ring 240 is formed at the end of the upper electrode layer 230 .

[0080] In this embodiment, the method for forming the upper electrode layer 230 and the metal ring 240 includes, for example: first, performing a sputtering process at a third temperature T3 to form a third metal material layer for constituting the upper electrode layer; then , forming the metal ring 240 on the third metal material layer, at this time, the metal ring 240 can be formed by a lift-off process to avoid etching damage to the third metal material layer; after that, perform an etching process , to form the upper electrode layer 230 by patterning the third metal material layer.

[0081] Similarly, in the sputtering process of the third metal material layer, the third temperature T3 is at least 150°C higher than the first t...

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Abstract

The invention provides a semiconductor device and a forming method thereof. By forming the first metal material layer on the surface of the piezoelectric layer, so that the mass load layer can be prepared prior to the upper electrode layer by using a lift-off process, so that the mass load layer can be stabilized in thickness during the process of preparing the mass load layer Detection, to avoid interference by the upper electrode layer. Moreover, based on the existence of the first metal material layer, it is further realized that the metal ring can also be prepared prior to the upper electrode layer, which greatly improves the flexibility of the manufacturing process of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a forming method thereof. Background technique [0002] Applying resonant structures made of piezoelectric materials with inverse piezoelectric effect to semiconductor devices, crystal oscillators and filters (for example, bulk acoustic wave filters) can usually be further formed. Among them, the resonant structure of semiconductor devices generally includes upper and lower electrodes and a piezoelectric layer clamped between the upper and lower electrodes. At present, in order to prepare resonant structures with different frequencies, a mass load layer is usually provided, and by adjusting the mass load layer thickness to further realize the frequency tuning of the resonant structure. [0003] In a practical semiconductor device, a mass-loaded layer is usually provided in a partial resonant structure and no mass-loaded layer is provided in a pa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/33H01L41/331H01L41/083H10N30/08H10N30/081H10N30/50
CPCH10N30/50H10N30/08H10N30/081
Inventor 吴盛凯蔡敏豪王勇涛罗传鹏
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP