Semiconductor memory device

Abstract

A semiconductor memory device may include a bit line extending in a first direction, a first conductive pattern extending in a second direction intersecting the first direction, a semiconductor pattern connecting the bit line and the first conductive pattern, a second conductive pattern including an insertion portion in the first conductive pattern, and a dielectric layer between the first conductive pattern and the second conductive pattern. The insertion portion of the second conductive pattern may have a width which increases as a distance from the semiconductor pattern increases.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2019-0134616 filed on October 28, 2019 at the Korean Intellectual Property Office, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0002] Example embodiments of inventive concepts relate to a semiconductor memory device, and more particularly, to a three-dimensional (3D) semiconductor memory device having improved integration density. Background technique [0003] Semiconductor devices have become highly integrated to provide improved performance and / or lower manufacturing costs. The integration density of semiconductor devices affects the cost of semiconductor devices, resulting in a demand for more highly integrated semiconductor devices. The integration density of a typical two-dimensional (2D) or planar semiconductor device can be mainly determined by the area occupied by a unit memory cell. Therefore, the integration density of a typical 2D semic...

AI Technical Summary

Problems solved by technology

However, although the integration density of 2D semiconductor devices continues to increase, it is still limited because more expensive equipment is required to form finer patterns.

Images