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Back surface structure of solar cell and solar cell comprising back surface structure

A solar cell and back structure technology, applied in the field of solar cells, can solve the problems affecting the performance index of solar cells, difficult to achieve higher field passivation and H passivation requirements, etc.

Active Publication Date: 2021-04-30
CHINT NEW ENERGY TECH (HAINING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing aluminum oxide stacked silicon nitride film structure has been difficult to achieve higher field passivation and H passivation requirements, which affects various performance indicators of solar cells, such as Uoc, Isc, Eta and the improvement of conversion efficiency

Method used

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  • Back surface structure of solar cell and solar cell comprising back surface structure

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Effect test

Embodiment 1

[0022] A back structure of a solar cell, comprising a silicon substrate, on the back of the silicon substrate, an aluminum oxide film layer is first deposited, and then a first silicon nitride film layer and a first silicon oxynitride film layer are sequentially deposited, wherein the first The refractive index of a silicon nitride film layer is greater than that of the first silicon nitride oxide film layer, the refractive index of the first silicon nitride film layer is 2.35, and the film thickness is 33nm; the refractive index of the first silicon nitride oxide film layer is 2.0, and the film thickness 45nm.

Embodiment 2

[0024] A backside structure of a solar cell, comprising a silicon substrate, differs from Example 1 in that a second silicon nitride film layer is also deposited on the first silicon nitride oxide film layer; the second silicon nitride film layer The refractive index of the first silicon nitride oxide film layer is smaller than that of the first silicon nitride film layer; the refractive index of the first silicon nitride film layer is 2.35, and the film thickness is 33nm; the refractive index of the first silicon nitride oxide film layer is 1.8 , the film thickness is 20nm, the refractive index of the second silicon nitride layer is 1.9, and the film thickness is 38nm.

Embodiment 3

[0026] A back structure of a solar cell, comprising a silicon substrate, differs from Embodiment 1 in that,

[0027] A second silicon nitride film layer is also deposited on the first silicon nitride oxide film layer. The second silicon nitride film layer is composed of three sub-layer silicon nitride film layers, and the aluminum oxide film layer points to the first silicon nitride film layer. The direction of the film layer from the inside to the outside is the first sub-silicon nitride film layer, the second sub-silicon nitride film layer, and the third sub-silicon nitride film layer; wherein, the refractive index of the second silicon nitride film layer is greater than that of the first sub-silicon nitride film layer A silicon nitride oxide film layer is smaller than the first silicon nitride film layer, and the refractive index of each film layer in the second silicon nitride film layer decreases sequentially from inside to outside.

[0028] The refractive index and thick...

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Abstract

The invention relates to the technical field of back surface structures of solar cells, and discloses a back surface structure of a solar cell in order to meet the passivation demand trend of the solar cell. The structure comprises an aluminum oxide film layer arranged on a silicon wafer substrate, a first silicon nitride film layer and a first silicon oxynitride film layer, wherein the first silicon nitride film layer and the first silicon oxynitride film layer are sequentially arranged on the aluminum oxide film layer from inside to outside. A second silicon nitride film layer which is arranged on the first silicon oxynitride film layer is also included. A refractive index of the first silicon nitride film layer is larger than that of the second silicon nitride film layer, and the refractive index of the second silicon nitride film layer is larger than that of the first silicon oxynitride film layer. By arranging the silicon nitride film layers and the silicon oxynitride film layers and arranging the silicon oxynitride film layers and the silicon nitride film layers alternately, the passivation requirement of the solar cell can be met, the performance indexes such as Uoc, Isc, FF and Eta of the solar cell are improved emphatically, and the structure is applied to a double-sided or single-sided PERC solar cell and a TopCon solar cell. And the efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cell back structure, in particular to a solar cell back structure and a solar cell containing the back structure. Background technique [0002] Depositing silicon nitride on the back surface of solar photovoltaic cells by plasma-enhanced chemical vapor deposition (PECVD) technology is an important process step to realize interface passivation, increase reflection and protect aluminum oxide film. [0003] In existing solar cells, such as double-sided PERC solar cells, the back structure is aluminum oxide superimposed silicon nitride film. In the preparation process of PERC cells, in order to ensure the small interface state on the back, the internal reflection of long-wave light, and the H passivation requirements, the structure of aluminum oxide + silicon nitride is generally used to treat the back. Under the current situation, continuing to improve the surface passivation effect has become a key t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/068
CPCH01L31/02167H01L31/0682H01L31/0684H01L31/068Y02E10/547
Inventor 李红博何胜单伟徐伟智曾鑫林赵迎财
Owner CHINT NEW ENERGY TECH (HAINING) CO LTD
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