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Preparation method of n-p-p+ structural battery

An n-p-p battery technology, applied in the field of solar photovoltaics, can solve the problems of PECVD slag and pollutants affecting the mask effect, etc., and achieve the effect of good compatibility and simple overall process

Inactive Publication Date: 2018-02-23
江苏科来材料科技有限公司
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  • Claims
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Problems solved by technology

[0009] 2) The jitter of plate-type PECVD during operation will cause slag drop, that is, pollutants falling on the mask surface will affect the mask effect

Method used

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  • Preparation method of n-p-p+ structural battery
  • Preparation method of n-p-p+ structural battery
  • Preparation method of n-p-p+ structural battery

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Embodiment Construction

[0047] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0048] In order to achieve the purpose of the present invention, in some embodiments of a method for preparing an n-p-p+ structure battery, a method for preparing an n-p-p+ structure battery specifically includes the following steps:

[0049] 1) The p-type silicon wafer 1 is polished to remove damage, forming a image 3 structure shown;

[0050] 2) After placing the two p-type silicon wafers 1 obtained in step 1) back to back, place them in an atmosphere of a boron doping source for diffusion or doping by spin coating to form a Figure 4 structure shown;

[0051] 3) remove the borosilicate glass of the p-type silicon wafer 1 obtained in step 2), and form a p+ layer 2 on the back side of the p-type silicon wafer 1, forming such as Figure 5 structure shown;

[0052] 4) Prepare AlOx / SiNx passivation layer 4 on the p+ layer 2 surface of the ...

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Abstract

The invention discloses a preparation method of an n-p-p+ structural battery. The surface of a P+ layer is plated with an AlO<x> / SiN<x> passivation layer firstly; then a silicon nitride layer is overid thereon on the basis; a film structure on the back surface also plays the effects of passivating and masking, so that damage to the mask layer caused by sticking point imprint or slag falling off can be avoided effectively; in addition, cleaning off of the mask is not needed, so that damage to the passivation surface in mask cleaning in the original mode also can be avoided; and meanwhile, enough thickness of the thicker mask also can be kept after the mask is cleaned for multiple time so as to satisfy the passivation requirement.

Description

technical field [0001] The invention belongs to the field of solar photovoltaics, and in particular relates to a preparation method of an n-p-p+ structure battery. Background technique [0002] As a kind of clean energy, solar photovoltaic is one of the candidates for future energy solutions. Especially after the development in recent years, its application is becoming more and more extensive, and its technology is becoming more and more mature. Solar cells are energy conversion devices based on semiconductor materials, and are the core part of solar power generation. Low cost and high efficiency are the current development direction of crystalline silicon solar cells. [0003] The current p-type PERC (passivated emitter and rear contact, passivated emitter back contact) structure battery has gradually become the mainstream mass-produced high-efficiency battery due to its considerable efficiency improvement, good process compatibility and relatively low equipment investment...

Claims

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Application Information

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IPC IPC(8): H01L31/068H01L31/18
CPCH01L31/0682H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 蓝家平陆森荣
Owner 江苏科来材料科技有限公司
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