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W-band ultra-wideband low-noise amplifier

A low-noise amplifier, ultra-wideband technology, applied in the direction of improving amplifiers to reduce noise effects, etc., can solve problems such as low gain, narrow frequency coverage, and large noise figure of low-noise amplifiers

Pending Publication Date: 2021-05-11
河北雄安太芯电子科技有限公司
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  • Abstract
  • Description
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Problems solved by technology

[0003] The current W-band low noise amplifier has a large noise figure, low gain, and narrow frequency coverage, which cannot meet the application requirements of the system.
One of the difficulties in designing a low-noise amplifier covering the entire frequency band of W-band is low-loss ultra-wideband matching, and the second problem is the stability of the entire frequency band from 0.01GHz to 110GHz

Method used

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  • W-band ultra-wideband low-noise amplifier

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Embodiment Construction

[0016] The technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0017] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0018] Such as figure ...

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Abstract

The invention discloses a W-band ultra-wideband low-noise amplifier, and relates to the technical field of low-noise amplifiers. The amplifier comprises a transistor G1, a signal input end of the amplifier is connected with a grid electrode of the transistor G1 through a first internal matching structure, a first built-in bias circuit is connected with a bias signal input end of the first internal matching structure, and a source electrode of the transistor G1 is grounded. The drain electrode of the transistor G1 is connected with the signal output end of the amplifier through a second internal matching circuit, and a second built-in bias circuit is connected with the bias signal input end of the second internal matching circuit. According to the amplifier, low-noise amplification covering the full frequency band of the W wave band and the stability of the full frequency band of 0.01 GHz to 110 GHz can be achieved.

Description

technical field [0001] The invention relates to the technical field of low-noise amplifiers, in particular to a W-band ultra-wideband low-noise amplifier. Background technique [0002] The low-noise amplifier is the core part of the receiving end in the transceiver component. It is generally directly connected to the antenna and is located in the first stage of the receiving front end. Its main function is to amplify the tiny signal received by the antenna from the external environment, reduce the influence of noise, and allow the system to obtain useful information. Widely used in security imaging, radar, satellite reception and other fields that require high receiver sensitivity. Because it is located at the front end of the reception, higher requirements are put forward for the low noise amplifier. While providing a certain gain and amplifying the signal, it also needs to avoid introducing noise as much as possible. The W band refers to the electromagnetic frequency of ...

Claims

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Application Information

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IPC IPC(8): H03F1/26
CPCH03F1/26
Inventor 何美林胡志富王亚冰刘亚男彭志农
Owner 河北雄安太芯电子科技有限公司
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