Ku-band low noise amplifier

Abstract

The invention discloses a Ku-band low noise amplifier, relating to a Ku-band differential low noise amplifier circuit structure that adopts different amplification structures to perform amplificationand adopts a CMOS process. The circuit structure comprises four parts that are a first-stage pseudo-differential amplification stage, a second-stage RC parallel feedback common-source amplification circuit, and input and output matching structures using bonding wire gold wire inductors, wherein a signal enters the input matching structure from the input end, performs primary amplification throughthe first-stage pseudo-differential amplification stage, and then enters a second-stage common-source level amplifier through a coupling capacitor, and is finally sent to the output end through the output matching structure. According to the circuit structure, the problem that the Ku-band low noise amplifier that adopts the CMOS process is insufficient in amplifying ability, poor in noise performance and poor in anti-interference ability can be solved; and moreover, the matching structures and circuit layout can be simplified by adopting the input-output bonding wire gold wire inductors, and the stability and availability of the circuit can also be improved by using the differential structure.

Description

technical field [0001] The invention is an amplifier, especially a Ku-band low-noise amplifier. Background technique [0002] As the first stage of radio frequency reception, low-noise amplifiers have amplifying capability and noise performance that are critical to the performance of the entire receiving channel. At present, low-noise amplifiers using 0.18um CMOS technology are rarely used in Ku-band circuits, because even if two stages or even Three-stage and four-stage amplification, the amplification ability of the final circuit is still not high enough, the noise performance is poor, and the matching is difficult to do, and even if the single-ended structure is adopted, the number of inductors used in the circuit is still large, the chip area is large, the circuit structure is complicated, and the stability is high. , Practicality also has bigger limitation. Contents of the invention [0003] The object of the present invention is to provide a Ku-band low-noise amplif...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a Ku-band low-noise amplifier to solve the problems of insufficient gain, poor noise, poor anti-interference, and large chip area of ​​the Ku-band CMOS low-noise amplifier.

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