Susceptor

Abstract

Provided is a susceptor that can improve the yield of semiconductor chips fabricated from a wafer, hardly causes chipping (chip), and has a long life. The susceptor has pockets (2) on which a wafer (10) is to be placed, wherein at least one of the pockets (2) has a plurality of supports (3) for supporting the wafer (10), a plurality of contact portions (4) that contacts a side surface (10a) of the wafer (10), and a plurality of non-contact portions (5) that does not contact the side surface (10a) of the wafer (10). The contact portions (4) and the non-contact portions (5) are formed alternately on an inner peripheral wall of the pocket (2), and at least two of the supports (3) are formed on a line connecting the center (O) of the pocket (2) and the non-contact portion (5) when the susceptor is viewed from above.

Description

technical field [0001] The present invention relates to susceptors for the manufacture of semiconductors. Background technique [0002] For example, in order to manufacture a good LED, it is important to uniformly progress the epitaxial growth of a thin film crystal layer laminated on the surface of a wafer to be a semiconductor chip. Therefore, in order to perform epitaxial growth and form a thin-film crystal layer with a uniform film thickness in susceptors used in semiconductor production, it is necessary to uniformly heat the wafer by applying conduction heat and radiant heat. However, since conduction heat is applied to the wafer mounted on the pocket of the susceptor from the portion in contact with the pocket, between the outer peripheral portion in contact with the pocket and the central portion not in contact with the pocket, The temperature of the wafer tends to become non-uniform. Specifically, a temperature difference tends to occur in a region of about 3 mm fr...

AI Technical Summary

Problems solved by technology

However, since conduction heat is applied to the wafer mounted on the pocket of the susceptor from the portion in contact with the pocket, between the outer peripheral portion in contact with the pocket and the central portion not in contact with the pocket, The temperature of the wafer tends to become non-uniform

Specifically, a temperature difference tends to occur in a region of about 3 mm from the outer periphery of the wafer toward the inner side, so the yield of semiconductor chips is poor.

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