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Group III nitride substrate preparation method and semiconductor device

A technology of nitride and nitride layer, which is applied in the direction of semiconductor devices, electrical components, nanotechnology, etc., and can solve the problems of impurity ion residues, material defects, uneven size, etc.

Active Publication Date: 2021-07-06
ZHIXIN SEMICON (HANGZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1. It is easy to cause dark cracks in the AlN layer, leading to material defects, and adversely affecting the quality and performance of subsequent epitaxial layers and devices;
[0005] 2. It is easy to cause the residue of impurity ions such as Cl and Br, causing pollution;
[0006] 3. The method of direct etching leads to poor periodicity and uneven size of AlN nanocolumns

Method used

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  • Group III nitride substrate preparation method and semiconductor device
  • Group III nitride substrate preparation method and semiconductor device
  • Group III nitride substrate preparation method and semiconductor device

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preparation example Construction

[0039] Based on the same inventive concept, the present invention also provides a method for preparing a III-nitride substrate, such as Figure 4 shown, including the following steps:

[0040] S1, forming 50nm porous SiO on the substrate surface 2 layer, where the SiO 2 The pores of the layer are through holes and are arranged periodically; among them, porous SiO is formed on the surface of the substrate 2 The layer is specifically: growing SiO on the surface of the substrate 2 layer, by etching method on the SiO 2 The surface of the layer forms a through-hole structure with periodic arrangement.

[0041]S2, covering the porous SiO with a 50nm porous metal mask layer 2 layer, wherein the porous metal mask layer is porous with the porous SiO 2 The pores of the layer correspond one-to-one and have the same pore size, and the lower surface of the porous metal mask layer has a plurality of nanoscale protrusion structures to match the porous SiO 2 The layer forms a hollow st...

Embodiment 1

[0047] Example 1 This example provides a method for preparing an AlN nanocolumn composite substrate

[0048] The method comprises the steps of:

[0049] 1. Formation process of porous SiO2 layer

[0050] Such as figure 1 As shown, the process includes:

[0051] (1) Put the sapphire substrate 1 into the ion-enhanced chemical vapor deposition equipment, pass through silane and carbon dioxide gas, and form a layer of SiO with a thickness of 100nm on the sapphire surface 2 layer.

[0052] (2) will grow with SiO 2 The sapphire substrate of the layer is put into the reactive ion etching machine, and the SiO 2 Layer etched into porous SiO with periodically arranged circular vias 2 In layer 2, the hole diameter is 500nm, the depth is 100nm, and the distance between adjacent holes is 1000nm.

[0053] 2. AlN nanocolumn formation process

[0054] Such as figure 2 and image 3 As shown, the process includes:

[0055] (1) A Ni metal mask layer 3 with a diameter of 500nm, a pitc...

Embodiment 2

[0061] Embodiment 2 This embodiment provides a method for preparing a GaN nanopillar composite substrate, the method comprising:

[0062] (1) Put the silicon carbide substrate into the ion-enhanced chemical vapor deposition equipment, pass through silane and carbon dioxide gas, and form a layer of SiO with a thickness of 50nm on the sapphire surface 2 layer.

[0063] (2) will grow with SiO 2 The sapphire substrate of the layer is put into the reactive ion etching machine, and the SiO 2 Layer etched into porous SiO with periodically arranged circular vias 2 layer, the hole diameter is 50nm, the depth is 50nm, and the distance between adjacent holes is 600nm.

[0064] (3) A Ti metal mask layer with a diameter of 50nm and a pitch of 600nm and periodically arranged circular holes is covered on the porous SiO 2 layer surface, the thickness of the Ti metal mask layer is 50nm, and the protruding structure on the lower surface is 100nm, so that the porous SiO 2 The layer forms a ...

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Abstract

A method for preparing a group III nitride substrate and a semiconductor device, wherein the method for preparing a group III nitride substrate comprises: forming porous SiO on the surface of the substrate 2 layer, covering the porous metal mask layer on the porous SiO 2 layer wherein the porous metal mask layer is porous with the porous SiO 2 The porosity of the layer is in one-to-one correspondence and the pore size is consistent; the group III nitride layer is simultaneously grown on the upper surface of the porous metal mask layer and in the one-to-one corresponding pores; the group III nitride layer on the upper surface of the porous metal mask layer is removed The nitride layer and the porous metal mask layer form periodically arranged group III nitride nanopillars. The present invention grows SiO on the surface of the substrate 2 layer, using a substrate with SiO 2 The refractive index difference of , increases the light extraction efficiency of deep ultraviolet LEDs; at the same time, SiO is formed 2 Periodically arranged through holes with the same structure as the metal double-layer mask layer, by growing group III nitrides in the through holes, the periodic arrangement is easily realized and the dark cracks and impurities caused by the direct etching method are avoided. Pollution.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a Group III nitride substrate and a semiconductor device. Background technique [0002] As a typical third-generation wide-bandgap semiconductor product, deep ultraviolet LED has the advantages of small size, long life, non-toxic, etc., can effectively kill bacteria, and has high-speed and high-efficiency for anthrax spores, E. The function of killing is widely used in surface, air, water sterilization, etc. As the core material of deep ultraviolet LEDs, AlGaN's forbidden band width is continuously adjustable from 3.4eV to 6.2eV with the change of Al composition from 0 to 1, and the corresponding waveband covers 200-365nm, covering most of the ultraviolet light. It is an ideal material for the preparation of ultraviolet luminescence and detection devices. [0003] In the prior art, the production of deep ultraviolet LEDs is usually achieved by grow...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00B82Y20/00B82Y40/00H01L33/10H01L33/22
CPCB82Y20/00B82Y40/00H01L33/007H01L33/10H01L33/22
Inventor 不公告发明人
Owner ZHIXIN SEMICON (HANGZHOU) CO LTD
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