Configuration method and reading method of 3D memory, and 3D memory

Abstract

The invention discloses a configuration method, a reading method and a 3D memory of a 3D memory. The configuration method includes writing data in a plurality of selected memory cells corresponding to a selected word line, and measuring the threshold voltage of the selected memory cells to obtain Obtain the relationship table, and write the relationship table into the configuration block; the reading method includes obtaining a data read request to determine the memory block where the data to be read is located, and reading its selected word line to obtain the data corresponding to the selected word line. Among the plurality of selected memory cells, the number of memory cells whose threshold voltage is lower than the first predetermined voltage is searched in the relational table in the configuration block to obtain the corresponding conduction voltage, and the conduction voltage is applied on the non-reading word line, A read voltage is applied on the read word line to obtain data to be read, and the 3D memory using the above configuration method and read method can dynamically reduce the conduction voltage of the memory cell so as to reduce the read disturbance caused by the read operation.

Description

technical field [0001] The invention relates to the field of storage technology, in particular to a configuration method and a reading method of a 3D memory and a 3D memory. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] The 3D memory device is mainly used as a non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respective...

AI Technical Summary

Problems solved by technology

The turn-on voltage applied on the gate conductor of the storage transistor causes the threshold voltage in the storage transistor to shift to a higher voltage direction, which makes reading the data in the memory block more error-prone and reduces the reliability of the read data

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