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A kind of glass-ceramic material and its preparation method and application in semiconductor devices

A technology of glass-ceramics and glass, which is applied in branch office equipment, electrical components, telephone structures, etc., to achieve the effect of improving transparency, impact resistance and high hardness

Active Publication Date: 2021-09-10
SHENZHEN JINGYUN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The glass-ceramic material provided by the present invention solves the defects in the performance of glass-ceramics with a single crystal phase by constructing a polycrystalline phase system to make it have multiple crystal phases, which not only ensures the high hardness of the glass-ceramics, but also improves the hardness of the glass-ceramics. The transparency and impact strength of glass-ceramics are suitable for the use of semiconductor devices, especially high-end mobile phone (including 5G) panels and backplane materials

Method used

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  • A kind of glass-ceramic material and its preparation method and application in semiconductor devices
  • A kind of glass-ceramic material and its preparation method and application in semiconductor devices
  • A kind of glass-ceramic material and its preparation method and application in semiconductor devices

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Effect test

Embodiment 1

[0073] This embodiment provides a series of glass-ceramic, which is composed of the following components (weight fraction, the same below): 2.0wt%Li 2 O, 25.5wt%A 2 lO 3 , 51.5%wtSiO 2 , 0.5wt%CaO, 0.5wt%SrO, 3.0wt%ZnO, 8.1wt%MgO, 0.5wt%BaO, 0.4wt%K 2 O, 1.0wt%Na 2 O, 5.0wt%ZrO 2 , 0.1wt%Y 2 o 3 , 0.4wt%Sb 2 o 3 , 0.4wt%NaCl, 0.5wt%SnO 2、 0.3%TiO 2 , 0.2%P 2 o 5、 0.1wt% La 2 o 3 .

[0074] The preparation process is as follows:

[0075] (1) Mix the components and melt at 1655°C for 10 hours, then cool at 1460°C for 3 hours, and then cast to obtain ordinary glass.

[0076] (2) Crystallized glass is obtained by crystallizing ordinary glass. The crystallization process is divided into three stages. The temperature of the first stage is 640°C for 2 h, and the temperature of the second stage is 710°C for 2 hours. 1 h, the third stage was 780 °C, and the time was 2 h; annealing treatment was performed after the crystallization treatment, and the temperature of anne...

Embodiment 2

[0080]This embodiment provides a glass-ceramic, which is composed of the following components: 51.7wt% SiO 2 , 25.1wt% Al 2 o 3 , 3.0wt% ZnO, 5.0wt% ZrO 2 , 0.6wt% Y 2 o 3 , 0.3wt% Sb 2 o 3 , 1.0wt% BaO, 0.5wt% SrO, 1wt% La 2 o 3 , 5.5wt%Na 2 O, 1.0wt%K 2 O, 0.5wt%Li 2 O, 0.5wt% CaO, 0.5wt% SnO 2 , 0.3 wt % TiO 2 , 0.2%P 2 o 5、 Composition of 3.0 wt% MgO, 0.3 wt% NaCl.

[0081] The preparation process is as follows:

[0082] (1) The components were mixed and melted at 1650°C for 8.3 hours, then cooled at 1450°C for 2 hours, and then cast to obtain ordinary glass.

[0083] (2) Crystallized glass is obtained by crystallizing ordinary glass. The crystallization process is divided into two stages. The temperature of the first stage is 640°C for 3 h, and the temperature of the second stage is 750°C for 3 hours. 2 h, annealing treatment was carried out after crystallization treatment, the temperature of annealing treatment was 578°C, and the time was 2.5 h.

[0084...

Embodiment 3

[0086] This embodiment provides a glass-ceramic, which is composed of the following components: 45.2 wt% SiO 2 , 33.1 wt%Al 2 o 3 , 1.0 wt% ZnO, 4.0 wt% ZrO 2 , 0.5 wt% Y 2 o 3 , 0.2 wt% Sb 2 o 3 , 0.6 wt% BaO, 0.5 wt% SrO, 0.8 wt% La 2 o 3 , 3.5 wt% Na 2 O, 1.2 wt%K 2 O, 1.5 wt% Li 2 O, 0.4 wt% CaO, 0.5 wt% SnO 2 , 0.3 wt % TiO 2 , 0.4 wt % P 2 o 5 , 6.0 wt% MgO, 0.3wt% NaCl composition.

[0087] The preparation process is as follows:

[0088] (1) The components were mixed and melted at 1660°C for 8 hours, then cooled at 1450°C for 2 hours, and then cast to obtain ordinary glass.

[0089] (2) Crystallized glass is obtained by crystallizing ordinary glass. The crystallization process is divided into three stages. The temperature of the first stage is 620°C and the time is 1.5 h. The temperature of the second stage is 730°C and the time is After 1.5 h, annealing treatment is required after the crystallization treatment, the temperature of annealing treatment is...

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Abstract

The invention relates to a glass-ceramic material, its preparation method and its application in semiconductor devices. The glass-ceramic material includes base glass, crystal nucleating agent, clarifying agent and additives. The glass-ceramic material provided by the present invention solves the defects in performance of glass-ceramics with a single crystal phase by constructing a specific polycrystalline phase system to make it have multiple crystal phases, and not only ensures the high hardness of the glass-ceramics, but also The transparency and impact resistance of glass-ceramics are improved, which is suitable for the use requirements of semiconductor devices, especially high-end mobile phone (including 5G) panels and backplane materials.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a glass-ceramic material, a preparation method thereof and an application in semiconductor devices. Background technique [0002] 5G communication uses a wireless spectrum above 3GHz, and the antenna structure will be more complex than that of 4G. The existing antenna layout structure cannot meet the needs of 5G. Therefore, in the 5G era, smartphones will abandon the existing metal back cover for signal shielding, and ceramic back covers and glass back covers will become alternatives to 5G communication products. Among them, the glass back cover using glass-ceramics has excellent wear resistance, and is easy to clean and color-matched, which has become a hot research topic at present. [0003] There are many types of glass-ceramics, and glass products with different uses can be produced by different composition ratios and different processes. At present...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C10/08C03C1/00C03B32/02H04M1/02
CPCC03C10/0045C03C1/004C03C1/00C03B32/02H04M1/0202
Inventor 赵天佑赵国祥刘浩然赵成玉
Owner SHENZHEN JINGYUN TECH CO LTD
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