BPSG film layer processing method and semiconductor intermediate product

A processing method and film layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as deviation and affect product quality, and achieve the effect of quality assurance

Pending Publication Date: 2021-06-04
ADVANCED SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the defect that the BP% of the BPSG film layer deviates and affects the product quality when the BPSG process is interrupted in the prior art, and to provide a BPSG film layer processing method and a semiconductor intermediate product

Method used

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  • BPSG film layer processing method and semiconductor intermediate product
  • BPSG film layer processing method and semiconductor intermediate product
  • BPSG film layer processing method and semiconductor intermediate product

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Experimental program
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Embodiment 1

[0030] The BPSG process usually grows a layer of 2000A (Am, 1A=10A) on the wafer. -10 m) about LTO-PETEOS film layer, and then grow BPSG film layer on it, under normal circumstances, the resulting products produced after the completion of the BPSG process are as follows figure 1 shown. When the BPSG process is interrupted due to rule parameter changes or machine alarms, the resulting products at this time are as follows: figure 2 As shown, the film quality of the BPSG film layer grown during and at the end of the process interruption (ie figure 2 The film quality of the film layer grown during the normal process will be very different, especially the content of BP% will be very different. At this time if in figure 2 On the basis of the target thickness, directly rework and grow the BPSG film layer with the remaining thickness, which will cause a layer of alarm layer with different BP% concentration and different film quality in the middle of the BPSG film layer, and the ...

Embodiment 2

[0045] This embodiment is further improved on the basis of Embodiment 1. Such as Figure 5 Shown, this BPSG membrane treatment method comprises the steps:

[0046] S201. Measure the thickness of the BPSG film layer in the resulting product after the interruption of the BPSG process, and calculate the time required for dry etching and etching of the BPSG film layer; calculate the time required for dry etching and etching of the LTO-PETEOS film layer through the first thickness required time.

[0047] Such as Figure 6 As shown, the BPSG process usually grows a layer of LTO-PETEOS film layer of about 2000A on the wafer, and then grows the BPSG film layer on it (the wafer is omitted in the figure). The dry method of these two film layers The etching rate is different. The dry etching rate of the LTO-PETEOS film layer is 3300A / min (A / min), and the dry etching rate of the BPSG film layer is 6000A / min.

[0048] Before carrying out dry etching, measure the thickness of the BPSG f...

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Abstract

The invention discloses a BPSG film layer processing method and a semiconductor intermediate product. The method is used for processing a BPSG film layer in a product obtained after a BPSG process is interrupted, and the obtained product comprises an LTO-PETEOS film layer located below the BPSG film layer and a wafer located below the LTO-PETEOS film layer. The method comprises the following steps: carrying out dry etching on the obtained product to etch all the BPSG film layer; cleaning dry etching residues by using a wet process, and carrying out smoothing treatment on the surface of the LTO-PETEOS film layer after the dry etching; and growing a BPSG film layer with a target thickness on the surface of the LTO-PETEOS film layer. According to the method, the BPSG film layer with the BP% concentration changed after the BPSG process is interrupted is subjected to dry etching removal, it is guaranteed that the film layer with the problem is thoroughly removed, then all the film layers are supplemented and grown, and it is guaranteed that BP% of the reworked BPSG film layer does not deviate, and the film quality is intact.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a BPSG film layer processing method and semiconductor intermediate products. Background technique [0002] BPSG (boro-phospho-silicate-glass, borophospho-silicate-glass) is silicon dioxide doped with boron and phosphorus. Due to the addition of boron and phosphorus impurities, the original ordered network structure of silicon dioxide becomes loose. Under certain conditions, BPSG has the ability to flow like a liquid, has a good filling ability for holes, and improves the flatness of the entire plane. BPSG plays a vital role in the semiconductor process as a front and rear isolation layer, especially the BP% (boron and phosphorus content) of BPSG affects the density of the film quality, the etching rate of the film quality and the reflow of the film quality (flow) effect, which in turn affects the stability and reliability of the device. [0003] However, during the BP...

Claims

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Application Information

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IPC IPC(8): H01L21/316
CPCH01L21/02129H01L21/02304H01L21/02315Y02P70/50
Inventor 归剑
Owner ADVANCED SEMICON MFG CO LTD
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