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Magnetic tunnel junction structure of synthetic anti-ferromagnetic layer with lattice transport function

A technology of magnetic tunnel junction and synthetic antiferromagnetism, which is applied in the field of memory to achieve the effect of electrical and yield improvement and device miniaturization

Active Publication Date: 2021-06-08
SHANGHAI CIYU INFORMATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Current manufacturers use various techniques to complete the lattice matching between the synthesized antiferromagnetic layer and the reference layer, but the situation of "de-ferromagnetic coupling" still often occurs

Method used

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  • Magnetic tunnel junction structure of synthetic anti-ferromagnetic layer with lattice transport function

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Embodiment Construction

[0016] The description of the following examples is a particular embodiment of the invention to be implemented with reference to an additional pattern. The direction term mentioned in the present invention, such as "top", "lower", "front", "post", "left", "right", "inside", "outside", "side", etc., is only reference Additional pattern direction. Therefore, the direction term used is used to illustrate and understand the invention, not to limit the invention.

[0017] The drawings and descriptions are considered to be in nature, not restrictive. In the figure, the structure similar to the structure is expressed in the same reference numeral. Further, in order to understand and facilitate the description, the size and thickness of each of the assemblies shown in the drawings are arbitrarily shown, but the present invention is not limited thereto.

[0018] In the drawings, the configuration range of the equipment, systems, components, and circuitry is exaggerated for clarity, underst...

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Abstract

The invention provides a magnetic tunnel junction structure of a synthetic anti-ferromagnetic layer with a lattice transmission effect. The structure is provided with an anti-ferromagnetic coupling layer which is combined with a synthetic anti-ferromagnetic layer of a double-ferromagnetic layer, and achieves the lattice conversion and strong ferromagnetic coupling between the synthetic anti-ferromagnetic layer and a reference layer through the cooperation of the anti-ferromagnetic coupling layer and a lattice separation layer. And the improvement of the magnetic tunnel junction unit in magnetism, electricity and yield and the micromation of the device are facilitated.

Description

Technical field [0001] The present invention relates to the field of memory, particularly with respect to a magnetic tunnel junction structure of a magnetic random memory. Background technique [0002] Magnetic Random Access Memory (MRAM) is in the magnetic tunnel junction (Magnetic Tunnel Junction; Mtj) with vertical anisotropic anisotropy; PMA, as a free layer of storage information, two in the vertical direction Magnetization direction, namely: upward and downward, corresponding to "0" and "1" or "1" and "0" in binary, in actual applications, the magnetization direction of the free layer when reading information or vacant Will remain unchanged; during the write, if the signal input is not the same as the existing state, the magnetization direction of the free layer will occur in the vertical direction of 180 degrees. The free layer magnetization direction of the magneto-random memory remains unchanged, the data storage capacity is called, thermal stability, requires different ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L43/12H10N50/10H10N50/01
CPCH10N50/01H10N50/85H10N50/10
Inventor 张云森郭一民陈峻肖荣福
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
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