Magnetic random access memory cell with composite seed layer structure

A technology of random access memory and storage unit, which is applied in the field of memory, and can solve problems affecting the performance of magnetic memory and reducing the reading speed of magnetic memory, etc.

Active Publication Date: 2021-09-28
SHANGHAI CIYU INFORMATION TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Low TMR can greatly affect the performance of magneti

Method used

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  • Magnetic random access memory cell with composite seed layer structure
  • Magnetic random access memory cell with composite seed layer structure
  • Magnetic random access memory cell with composite seed layer structure

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Embodiment Construction

[0034] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0035] It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate ...

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Abstract

The invention provides a composite seed layer structure and a magnetic random access memory storage unit thereof. The composite seed layer of the magnetic random access memory cell is located between the bottom electrode and the anti-parallel ferromagnetic superlattice layer. In order to ensure the normal operation of the magnetic random access memory, the lattice constant of the magnetic random access memory is highly matched with that of the anti-parallel ferromagnetic superlattice layer while the composite seed layer positioned below the anti-parallel ferromagnetic superlattice layer is required to have ultrahigh flatness. In the prior art, the composite seed layer generally adopts Pt grown through PVD, and the thickness of the composite seed layer is greater than 5nm. According to the invention, the composite seed layer of a multi-layer structure containing metal copper or copper nitride is adopted, the perpendicular magnetic anisotropy of the anti-parallel ferromagnetic superlattice layer is increased, and the production cost is reduced and the problem that thicker Pt is difficult to etch is avoided on the premise of ensuring the normal work of the magnetic random access memory.

Description

technical field [0001] The invention relates to the field of memory technology, in particular to a magnetic random access memory unit containing copper or copper nitride as a composite seed layer. Background technique [0002] In recent years, vertical spintronic torque magnetic memory (pSTT-MRAM) using Magnetic Tunnel Junction (Magnetic Tunnel Junction, MTJ) has the characteristics of non-volatility, high-speed reading and writing, large capacity and low energy consumption, and is considered to be the One of the most promising memories of the future. The basic structure of Magnetic Tunnel Junction (MTJ) includes bottom electrode, seed layer, antiparallel ferromagnetic superlattice layer, lattice barrier layer, reference layer, barrier layer, free layer, covering layer and top electrode. All the above structures are sequentially deposited by physical vapor deposition (Physical Vapor Deposition, PVD). [0003] Tunneling magnetoresistance effect (TMR) refers to the effect th...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/10H01L43/02
CPCH10N50/80H10N50/10H10N50/85
Inventor 郭一民肖荣福陈峻麻榆阳
Owner SHANGHAI CIYU INFORMATION TECH
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