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Thickness measuring device of anti-reflection film and method for monitoring growth of anti-reflection film in situ

A technology of thickness measurement and anti-reflection film, which is applied in the direction of measuring devices, optical devices, instruments, etc., can solve the problem of inaccurate anti-reflection film thickness, etc., and achieve the effect of easy operation, accuracy assurance and accurate testing

Inactive Publication Date: 2021-06-11
宣城睿晖宣晟企业管理中心合伙企业(有限合伙)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the inaccurate defects of using crystal oscillators to detect the thickness of the anti-reflection film in the prior art, thereby providing a device for measuring the thickness of the anti-reflection film and a method for in-situ monitoring the growth of the anti-reflection film

Method used

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  • Thickness measuring device of anti-reflection film and method for monitoring growth of anti-reflection film in situ
  • Thickness measuring device of anti-reflection film and method for monitoring growth of anti-reflection film in situ
  • Thickness measuring device of anti-reflection film and method for monitoring growth of anti-reflection film in situ

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Embodiment 1

[0051] This embodiment provides a specific embodiment of a thickness measuring device for reducing the membrane, such as figure 1 As shown, the solar cell 7 is placed in a cavity in the sample stage 3, and a laser emitter 2 is attached to the sample stage 3. The solar cell 7 is connected to the current tester 4, and the laser emitter 2 is irradiated in the solar cell 7. On the surface of the surface, the current generates a current, and the current generated by the solar cell 7 is detected using the current tester 4. When the thickness of the reducing film is different, the current generated by the laser irradiation will vary. The size of the detection current is then determined to determine the thickness of the reducing reaction, and ensure the accuracy of the reduction of the film thickness measurement.

[0052] The positive and negative electrode of the current tester 4 uses the first electrode sheet to the second electrode sheet. When the thickness of the reducing film is requ...

Embodiment 2

[0059] This embodiment provides an in-situ monitoring and reduced reaction method, such as Figure 4 As shown, specifically includes the following steps:

[0060] Step S1, measuring the surface of the solar cell 7 surface plated, the coating duration is T 1 ;

[0061] Step S2, measure the solar cell 7 to block the solar cell 7, measure the current I generated by the solar cell 7 by the beam irradiation membrane 1 size;

[0062] Step S3, repeating the steps of the above S1 and S2 described above to obtain N + 1 set of data pairs of the current size and the coating time, where N is greater than or equal to 2 natural number;

[0063] Step S4, based on the N + 1 set of data pairs obtained by obtaining the current size and the coating time, by linear fitting, current-time function curve of the current magnitude and the coating time;

[0064] Step S5, based on the resulting current-time function curve, the current maximum value in the current-time function curve i max And with current ma...

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Abstract

The invention provides a thickness measuring device for an anti-reflection film and a method for monitoring the growth of the anti-reflection film in situ, and belongs to the technical field of thickness detection of the anti-reflection film, and the device comprises: a sample stage which is provided with a concave cavity for accommodating a solar cell; a laser emission, wherein the laser emission direction of the laser emitter faces the anti-reflection film on the surface of the solar cell; and a current tester, wherein the positive electrode and the negative electrode of the current tester are electrically connected with the two opposite sides of the solar cell respectively. According to the thickness measuring device of the anti-reflection film, the laser transmitter irradiates the surface of the solar cell to generate current, the current tester is used for detecting the current generated by the solar cell, when the thicknesses of the anti-reflection film are different, the current generated by laser irradiation is different, the thickness of the anti-reflection film judged by detecting the magnitude of the current. and the thickness measurement accuracy of the anti-reflection film is ensured.

Description

Technical field [0001] The present invention relates to the field of reducing film thickness detecting, and more particularly to a thickness measuring device for reducing the membrane and the growth of the in-situ monitoring and reducing membrane growth. Background technique [0002] The reducing membrane (ARC) is one of the thin film structures that require a focus in the manufacture of solar cells. The reducing film can reduce the reflection of the solar cell surface to incident light, increasing the transmittance of the sunlight, improves the optical current and conversion efficiency. The transparent oxide electrical membrane (TCO) is the most widely used transparent electrode material in solar cells, and both optical and electrical. For optical performance, the TCO film needs to satisfy the need to reduce the thickness of the reducing film, a thin film having a thickness can form an optimal reflection effect on the light of a wavelength, so the thickness of the TCO film is of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/06
CPCG01B11/0625
Inventor 不公告发明人
Owner 宣城睿晖宣晟企业管理中心合伙企业(有限合伙)