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Magnetic random access memory and forming method thereof

A technology of random access memory and magnetic tunnel, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of the performance of magnetic random access memory to be improved, and achieve low error rate, sensitive reading and writing, and large selection Effect

Pending Publication Date: 2021-06-11
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The performance of the existing magnetic random access memory needs to be improved

Method used

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  • Magnetic random access memory and forming method thereof
  • Magnetic random access memory and forming method thereof
  • Magnetic random access memory and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] As mentioned in the background, the performance of the existing magnetic random access memory still needs to be improved. Now analyze and illustrate in conjunction with specific embodiment.

[0034] figure 1 It is a schematic diagram of the cross-sectional structure of the magnetic random access memory in an embodiment.

[0035] Please refer to figure 1 , the magnetic random access memory includes: a substrate 100; a gate structure 102 located on the substrate 100; a source-drain doped region 101 located in the substrate on both sides of the gate structure 102; a first dielectric layer 103 located on the substrate 100 ; the conductive structure 104 located in the first dielectric layer 103; the second dielectric layer 105 located on the first dielectric layer 103; the bottom electrode plug 106 located in the second dielectric layer 105, the bottom electrode plug 106 and the The conductive structure 104 is electrically connected; the bottom electrode 107 on the bottom...

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Abstract

The invention discloses a magnetic random access memory and a forming method thereof. The magnetic random access memory comprises a substrate, a first dielectric layer, multiple composite layers, amagnetic tunnel structure and a top electrode, wherein the first dielectric layer is located on the substrate, and a first opening is formed in the first dielectric layer; the multiple composite layers are located in the first opening, the multiple composite layers are overlapped in the direction perpendicular to the side wall surface and the bottom surface of the first opening, each composite layer comprises a first electrode layer and a second electrode layer located on the surface of the first electrode layer, and the first electrode layer and the second electrode layer are made of different materials; the magnetic tunnel structure is positioned on the multiple composite layers; and the top electrode is located on the magnetic tunnel structure. The performance of the magnetic random access memory is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a magnetic random access memory and a forming method thereof. Background technique [0002] Magnetic random access memory is a non-volatile memory technology that is being widely accepted by the industry as a mainstream data storage technology. It integrates a magnetoresistive device and a silicon-based selection matrix. Key attributes are non-volatility, low-voltage operation, endurance for unlimited reads and writes, fast read and write operations, and easy integration as a back-end technology. These properties make magnetic random access memory a potential replacement for many types of memory in a variety of applications. [0003] The magnetic random access memory stores "1" and "0" data through a magnetic tunnel junction (Magnetic Tunnel Junctions, MTJ for short) element. The basic structure of a magnetic tunnel junction element is a structure in which an insulat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/22
CPCH10B61/00
Inventor 王能语
Owner SEMICON MFG INT (SHANGHAI) CORP
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