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lcos structure and method of forming the same

一种正下方、硅基板的技术,应用在LCOS结构及其形成领域,能够解决占用面积、不实现显示、LCOS面板尺寸大等问题,达到增强可靠度的效果

Active Publication Date: 2022-07-29
HUA WEI SEMICONDUCTOR (SHANGAHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above two protruding directions protrude in opposite directions, occupying a lot of area, and it only completes the connection function and does not realize the display function, so the size of the LCOS panel with this structure is relatively large

Method used

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  • lcos structure and method of forming the same
  • lcos structure and method of forming the same

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Embodiment Construction

[0030] Based on the above research, embodiments of the present invention provide an LCOS structure and a method for forming the same. The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the accompanying drawings are in a very simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention.

[0031] An embodiment of the present invention provides an LCOS structure, comprising: a silicon substrate, a liquid crystal layer and a transparent conductive layer above the silicon substrate; a conductive pad is formed in the silicon substrate, and an opening exposing the conductive pad is formed , and at least one metal layer; the opening is located on the peripheral side of th...

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Abstract

The present invention provides an LCOS structure and a method for forming the same. The LCOS structure includes: a silicon substrate, a liquid crystal layer and a transparent conductive layer above the silicon substrate; a conductive pad is formed in the silicon substrate, an opening exposing the conductive pad and at least a metal layer; the opening is located on the peripheral side of the liquid crystal layer; the metal layer is not distributed directly under the conductive pad; the conductive pad is located in the same layer and electrically connected to one of the at least one metal layer; The gap between the silicon substrate and the transparent conductive layer is filled with conductive glue. The transparent conductive layer and the conductive pad are electrically connected through the metal conductive particles in the conductive glue, and the connection of the electrical signal in the guiding process can reduce the size of the LCOS structure. The metal layer is not distributed directly under the conductive pad. In this way, even if the conductive pad is slightly damaged during the lamination process between the transparent conductive layer and the silicon substrate, the metal layer directly under the conductive pad is no longer damaged. reliability of the LCOS structure.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing, and in particular relates to an LCOS structure and a method for forming the same. Background technique [0002] An LCOS (Liquid Crystal on Silicon, liquid crystal on silicon) display is a reflective liquid crystal display device, which uses semiconductor silicon crystal technology to control liquid crystals to "project" color images. In the manufacturing process of the LCOS display, the electrical connection between the transparent conductive layers (eg, ITO) located on the upper and lower sides of the liquid crystal layer and the metal pads is an indispensable link. [0003] like figure 1 As shown, in an LCOS display, a metal pad 12 is formed on a silicon substrate 11, a liquid crystal layer 13 is formed above the silicon substrate 11, a transparent conductive layer 15 is formed above the liquid crystal layer 13, and the transparent conductive layer 15 and the metal pad...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1362G02F1/1333G02F1/13
CPCG02F1/136277G02F1/1333G02F1/1303G02F1/13458G02F1/136286
Inventor 格培文范纯圣
Owner HUA WEI SEMICONDUCTOR (SHANGAHAI) CO LTD