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Semiconductor device and preparation method thereof

A semiconductor and packaging material technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as loose bonding between chips and copper bridges, glue overflow between chips and copper bridges, product failure, etc. , to achieve reliable electrical performance, improve reliability, and reduce impact

Active Publication Date: 2021-06-18
GREE ELECTRIC APPLIANCES INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although the copper bridge heat dissipation structure has significantly improved the heat dissipation effect, there are glue overflows and voids between the chip and the copper bridge during the packaging process, resulting in problems such as loose bonding between the chip and the copper bridge. product failure

Method used

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  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof

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Embodiment Construction

[0056]The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0057] In describing the present invention, it is to be understood that the terms "central", "longitudinal", "transverse", "front", "rear", "left", "right", "vertical", "horizontal", The orientations or positional relationships indicated by "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather...

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Abstract

The invention relates to a semiconductor device and a preparation method thereof. The semiconductor device comprises a semiconductor assembly, the semiconductor assembly comprises a chip, wherein the chip comprises a first side face and a second side face which are oppositely arranged, the first side face is provided with at least one electrode area and a non-electrode area, each electrode area of the at least one electrode area is internally provided with an electrode, and the at least one electrode area comprises a first electrode area; an adhesive film layer which is arranged in the non-electrode area; a first electric connecting piece which comprises a first joint part, wherein the first joint part is bonded with the adhesive film layer, a first electric connecting piece, the first electrode area and the adhesive film layer around the first electrode area jointly form a cavity, and a through hole is formed in the position, corresponding to the cavity, of the first electric connecting piece; and a conductive combining piece which is arranged in the cavity and the through hole and is used for connecting the first electric connecting piece with the chip. According to the invention, the overflow of the conductive bonding material and the generation of cavities or bubbles can be relieved, so that the bonding between the chip and the first electric connecting piece is tighter, and the reliability is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor device and a preparation method thereof. Background technique [0002] With the development of integration, modularization and miniaturization of electronic integrated circuits, the requirements for chip packaging are getting higher and higher. The heating problem of power devices is one of the most important problems faced by the semiconductor industry. For this reason, people have carried out related explorations. From the initial welding of the leads to the attachment of the heat sink, and then to the copper bridge heat dissipation structure, the heat dissipation effect has been improved. Great improvement. [0003] Although the copper bridge heat dissipation structure has significantly improved the heat dissipation effect, there are glue overflows and voids between the chip and the copper bridge during the packaging process, resulting in problems such as loose b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/49H01L21/48
CPCH01L23/49H01L21/4889H01L21/4885H01L2224/40245H01L2224/32245H01L2924/181H01L2224/48247H01L2924/00012
Inventor 赵健康史波廖童佳
Owner GREE ELECTRIC APPLIANCES INC
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