A semiconductor manufacturing method

Abstract

The invention provides a semiconductor manufacturing method, in which quantum wells with different layer thicknesses are grown in the same plane in a single semiconductor epitaxial deposition process, comprising the following steps: performing the first layer epitaxy to grow a basic epitaxial layer structure, the basic epitaxial layer The structure includes a substrate, a sacrificial layer and a bridging layer, the sacrificial layer is located between the substrate and the bridging layer; the bridge pattern is formed by photolithography and etching, and a wafer with patterned bridgehead overhangs is formed; the wafer is cleaned; the cleaned Wafers with patterned bridgehead overhangs are sent back to the epitaxy facility for a second layer of epitaxy; portions of the viaduct structures are selectively removed, resulting in wafers with epitaxial layers of different thicknesses in different regions. The corresponding laser integrated structure manufacturing method and the laser integrated structure manufactured thereby are also provided. When this optical mode exits the integrated device through the beamforming section, the resulting far-field pattern is narrower, which facilitates the optical coupling of the device into an optical fiber and the reliability of the device.

Description

technical field [0001] The invention relates to the field of semiconductor components and chips, in particular to a semiconductor manufacturing method for growing quantum wells with different layer thicknesses in the same plane during a single semiconductor epitaxial deposition process. Background technique [0002] In opto-semiconductor integrated structures, optical modes must be able to propagate along the horizontal planar waveguide from one part to another part with different properties with minimal loss. Generally, epitaxy can complete parts with different properties on the plane with multiple growths, but the cost is high, and the height of waveguides with different properties needs to be strictly controlled. Techniques capable of growing cross-sections with multiple portions of different properties in a single epitaxial growth would be beneficial in reducing cost and complexity and need to be developed and investigated. [0003] Existing techniques such as so-called...

AI Technical Summary

Problems solved by technology

However, with SAG technology, the BFS must be formed on the unmodified epi region, while the laser must be formed on the modified epi region

Therefore, it is difficult to monitor and characterize materials used in laser components by SAG techniques

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