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Silicon carbide diffusion welding method and silicon carbide heat exchanger

A technology of silicon carbide heat exchanger and diffusion welding, which is applied in the direction of welding equipment, non-electric welding equipment, metal processing equipment, etc., and can solve the problem of reduced tolerance

Active Publication Date: 2021-06-29
HANGZHOU SHENSHI ENERGY CONSERVATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Therefore, the technical problem to be solved by the present invention is to overcome the defect that there is a transition layer between silicon carbide formed by diffusion welding in the prior art, which leads to a decrease in the resistance of silicon carbide products to high temperature and corrosion, thereby providing a silicon carbide Diffusion welding method and silicon carbide heat exchanger

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  • Silicon carbide diffusion welding method and silicon carbide heat exchanger

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Embodiment 1

[0036] This embodiment provides a silicon carbide diffusion welding method, comprising:

[0037] The silicon carbide parts are cleaned, and at least two silicon carbide parts are stacked according to the structure of the product to be formed and placed in a diffusion welding furnace. In order to prevent the dislocation between silicon carbide parts caused by the movement of silicon carbide parts during the vacuuming process, place the silicon carbide parts in the diffusion welding furnace, and use the upper and lower pressure heads of the diffusion welding furnace to preheat the silicon carbide parts. After pressing, vacuumize the diffusion welding furnace until the pressure in the furnace is 10 －2 Pa.

[0038] For the diffusion welding furnace according to the following figure 1 The heating method shown is for heating. Specifically, 4 stages of gradient temperature rise are carried out in the diffusion welding furnace, and a heat preservation and pressurization stage is al...

Embodiment 2

[0042] This embodiment provides a silicon carbide diffusion welding method, comprising:

[0043] The silicon carbide parts are cleaned, and at least two silicon carbide parts are stacked according to the structure of the product to be formed and placed in a diffusion welding furnace. In order to prevent the dislocation between silicon carbide parts caused by the movement of silicon carbide parts during the vacuuming process, place the silicon carbide parts in the diffusion welding furnace, and use the upper and lower pressure heads of the diffusion welding furnace to preheat the silicon carbide parts. After pressing, vacuumize the diffusion welding furnace until the pressure in the furnace is 10 －3 Pa.

[0044] The temperature inside the diffusion welding furnace is raised. Specifically, 4 stages of gradient temperature rise are carried out in the diffusion welding furnace, and a heat preservation and pressurization stage is also included between the 4 stages of gradient tem...

Embodiment 3

[0048] This embodiment provides a silicon carbide diffusion welding method, comprising:

[0049] The silicon carbide parts are cleaned, and at least two silicon carbide parts are stacked according to the structure of the product to be formed and placed in a diffusion welding furnace. In order to prevent the dislocation between silicon carbide parts caused by the movement of silicon carbide parts during the vacuuming process, place the silicon carbide parts in the diffusion welding furnace, and use the upper and lower pressure heads of the diffusion welding furnace to preheat the silicon carbide parts. After pressing, vacuumize the diffusion welding furnace until the pressure in the furnace is 10 －2 Pa.

[0050] The temperature inside the diffusion welding furnace is raised. Specifically, 4 stages of gradient temperature rise are carried out in the diffusion welding furnace, and a heat preservation and pressurization stage is also included between the 4 stages of gradient tem...

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Abstract

The invention relates to the technical field of silicon carbide material connection, in particular to a silicon carbide diffusion welding method and a silicon carbide heat exchanger. The silicon carbide diffusion welding method comprises the steps that, silicon carbide parts are cleaned, and at least two silicon carbide parts are stacked according to the structure of a to-be-formed product and placed in a diffusion welding furnace; the diffusion welding furnace is vacuumized till the air pressure in the furnace is not larger than 10 <-2 > Pa or the diffusion welding furnace is filled with protective gas till the air pressure in the furnace ranges from 0.2 Mpa to 0.5 Mpa; the temperature in the diffusion welding furnace is increased till the temperature in the furnace is 2000-2400 DEG C, the pressure intensity of 20-25 Mpa is applied to the silicon carbide parts, and the constant temperature and the constant pressure are kept for at least 50 min; and the diffusion welding furnace is cooled to be not higher than 300 DEG C, and then the blow-on is carried out to obtain a silicon carbide diffusion welding product. The obtained silicon carbide product has no transition layer inside, and silicon carbide parts can be completely welded and fused, so that the influence of the transition layer between silicon carbide on the performance of a silicon carbide product is avoided.

Description

technical field [0001] The invention relates to the technical field of silicon carbide material connection, in particular to a silicon carbide diffusion welding method and a silicon carbide heat exchanger. Background technique [0002] Compared with heat exchangers made of other materials, silicon carbide heat exchangers have comprehensive strong corrosion resistance, good heat exchange effect, and long service life. However, due to the current welding technology for silicon carbide materials, it is necessary to add transition layers such as solder and coating between the silicon carbide materials to be welded, and then perform welding by brazing, diffusion welding and other processes. Although this method achieves the purpose of welding, connecting or bonding surfaces between silicon carbide materials, there is a transition layer between the silicon carbide materials, and the material of the transition layer or the remaining composition after transition welding is different...

Claims

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Application Information

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IPC IPC(8): B23K20/14B23K20/24B23K20/02
CPCB23K20/14B23K20/24B23K20/026
Inventor 冯付韬任来超蒋健安余秀英石景祯付敏翔丁旭杨代坤杨超蒋卫波
Owner HANGZHOU SHENSHI ENERGY CONSERVATION TECH
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