Semiconductor device, manufacturing method thereof, and multi-time programmable memory device
A semiconductor and memory technology, applied in the field of multiple programmable memory devices, can solve problems such as reducing data retention paths, current leakage, etc.
Pending Publication Date: 2021-06-29
TAIWAN SEMICON MFG CO LTD
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- Application Information
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Problems solved by technology
Multiple times programmable memory devices utilizing high dielectric (high-k) spacer materials may include high charge trapping centers and may form paths for current leakage and reduced data retention
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[0091]The ensuing disclosure provides many different implementations or examples for achieving different features of the presented subject matter. Specific embodiments of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the present disclosure. For example, in the ensuing description a second feature is formed on or over a first feature, may include embodiments where the first and second features are in direct contact, and may also include Additional features may be formed between the first and second features so that the first and second features are not in direct contact. Additionally, the present disclosure may repeat reference numerals and / or letters in various embodiments. Such repetition is for the sake of simplicity and clarity, and the repetition itself does not imply a relationship between the various embodiments and / or configurations discussed.
[0092] In addition, ...
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Abstract
The invention discloses a semiconductor device, a manufacturing method thereof and a multi-time programmable memory device. The semiconductor device comprises a substrate, a gate oxide layer formed on the substrate, a gate electrode formed on the gate oxide layer, and a spacer formed adjacent to the gate electrode and above the substrate. The spacer includes air-filled voids to prevent leakage of charge to or from the gate, thereby reducing data loss and providing better memory retention. The reduction of charge leakage is attributed to reduced parasitic capacitance, fringe capacitance, and overlap capacitance due to the fact that the air has a low dielectric constant relative to other spacer materials. The spacer may include multiple layers, such as multiple oxide and nitride layers. In some embodiments, the semiconductor device is a multi-time programmable (MTP) memory device.
Description
technical field [0001] The present disclosure relates to semiconductor devices and methods for fabricating semiconductor devices, particularly multi-time programmable memory devices. Background technique [0002] The present disclosure relates generally to semiconductor devices and methods for fabricating semiconductor devices, and more particularly to the formation of multiple-time programmable memory devices with improved data retention. [0003] Semiconductor devices are used in a wide variety of electronic devices, and improvements with respect to the production and performance of semiconductor devices are generally desired. Multiple times programmable memory devices utilizing high dielectric (high-k) spacer materials may include high charge trapping centers and may form paths for current leakage and reduced data retention. Accordingly, improved multiple-time programmable memory devices and methods of forming the same are needed. Contents of the invention [0004] So...
Claims
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IPC IPC(8): H01L27/11521H01L29/423H01L21/28
CPCH01L29/40114H01L29/42328H10B41/30H01L29/6656H01L29/6653H01L29/4991H10B41/35H01L29/40117H01L21/7682H01L21/28518H01L21/28141H01L29/4983H01L29/0649H01L29/66825H01L29/788
Inventor 葛贝夫·辛格庄坤苍陈信吉
Owner TAIWAN SEMICON MFG CO LTD