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nmos power transistor gate drive module, drive circuit and switching power supply

A gate drive and drive module technology, applied in the field of switching power supplies, can solve problems such as poor current accuracy, large errors, and complex internal circuit structures, and achieve the effects of simple structure, small errors, and low cost

Active Publication Date: 2021-08-24
SHANGHAI XINLONG SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] When an NMOS power tube is used as a power switch tube in a switching power supply chip, the drive circuit of the NMOS power tube often needs to add an external BOOST capacitor to provide a stable power supply for the drive circuit, and a corresponding capacitor charging circuit, level shifting circuit and Drive circuit, the internal circuit structure is complex
Moreover, in the prior art, overcurrent detection usually realizes overcurrent protection by sampling part of the power tube current and calculating the current value of the entire chip power tube through proportional conversion. The problem of poor current accuracy

Method used

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  • nmos power transistor gate drive module, drive circuit and switching power supply
  • nmos power transistor gate drive module, drive circuit and switching power supply
  • nmos power transistor gate drive module, drive circuit and switching power supply

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Embodiment Construction

[0025] In order to facilitate the understanding of those skilled in the art, the present invention will be further described in detail below with reference to specific embodiments.

[0026] The embodiment of the present invention first provides a switching power supply, please refer to figure 1 , including a power supply circuit 20 , an output circuit 30 and a switching power supply drive circuit 10 . One end of the switching power supply driving circuit 10 is connected to the power supply circuit 20 , and the other end of the switching power supply driving circuit 10 is connected to the output circuit 30 . The switching power supply is a boost switching power supply.

[0027] In this embodiment, the power supply circuit 20 includes an input DC power supply vcc and an input filter capacitor C1 connected in parallel.

[0028]The output circuit 30 includes a Schottky diode D1, an energy storage capacitor C2 and a load resistor RL. The anode of the Schottky diode D1 is connecte...

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PUM

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Abstract

The invention provides an NMOS power tube gate drive module, a drive circuit and a switching power supply, and relates to the technical field of switching power supplies. The NMOS power tube gate drive module is realized by a transistor integrated circuit process. The NMOS power transistor grid drive module has a simple internal circuit and is suitable for switching power supply drive circuits and boosted switching power supplies. By quickly turning on and off the NMOS power tube, it solves the problem of large turn-on and turn-off losses of the NMOS power tube used in the switching power supply chip, and has its own over-current detection function, which has the advantages of simple structure, low cost, and high reliability.

Description

technical field [0001] The invention relates to the technical field of switching power supplies, in particular to an NMOS power tube gate driving module, a driving circuit and a switching power supply. Background technique [0002] There are two types of power transistors inside the switching power supply chip: power transistors and power MOS transistors. Power MOS transistors are further divided into PMOS power transistors and NMOS power transistors. For boost chips, PMOS transistors are selected as the control circuit of the switching transistor and NMOS transistors are selected. The control circuit of the tube as a switch tube is completely different. [0003] Different types of power MOS transistors have different internal majority carriers when they work. Compared with PMOS power transistors, the on-resistance Rdson of NMOS power transistors is smaller under the same unit area. In the case of the same on-resistance Rdson, the NMOS power transistor has a smaller inter-e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08H02H7/12H02H1/00
CPCH02H1/0007H02H7/1203H02M1/08
Inventor 贾生龙李瑞平
Owner SHANGHAI XINLONG SEMICON TECH CO LTD
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