High-efficiency insulated isolation SiC MOSFET gate driving circuit
A gate drive circuit and insulation isolation technology, applied in the field of high-efficiency insulation isolation SiCMOSFET gate drive circuit, can solve the problems of reducing system switching frequency, reducing drive circuit efficiency, increasing drive delay, etc., to improve signal processing speed and improve power supply The effect of improving efficiency and reliability
Active Publication Date: 2021-07-02
无锡英诺赛思科技有限公司 +1
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Problems solved by technology
A relatively large series connection protection resistor will bring two problems. One is that the switch on the resistor is damaged and the efficiency of the drive circuit is reduced; the other is that the drive delay is increased and the system switching frequency is finally reduced.
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[0047] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.
[0048] Such as figure 1 As shown, the high-efficiency insulation and isolation SiC MOSFET gate drive circuit of the present invention includes: a high-precision input signal receiving circuit 1, a digital control circuit 2, a modulation sending circuit 5, an isolation circuit 9, and a high common-mode transient suppression differential signal receiving circuit 6. Output drive circuit 7 , low voltage generation circuit 3 at the sending end, low voltage generation circuit 8 at the receiving end, and chip status monitoring circuit 4 . Among them, the high-precision input signal receiving circuit 1, the digital control circuit 2, the modulation sending circuit 5, the sending end low-voltage generating circuit 3 and the chip status monitoring circuit 4 constitute the sending end circuit, and the high common-mode transient suppression differential s...
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The invention discloses a high-efficiency insulated isolation SiC MOSFET gate driving circuit. The circuit comprises a high-precision input signal receiving circuit, a digital control circuit, a modulation transmitting circuit, an isolating circuit, a high common mode transient suppression differential signal receiving circuit, a high-efficiency output driving circuit, a transmitting end low-voltage generating circuit, a receiving end low-voltage generating circuit and a chip state monitoring circuit. According to the high-efficiency insulated isolation SiC MOSFET gate driving circuit provided by the invention, firstly, a high-voltage capacitance insulated isolation technology is adopted, so that the signal processing speed can be improved on the premise of realizing high voltage resistance; secondly, the driving current can be adaptively adjusted according to the size of the load and the frequency of input control pulses, so that the power supply efficiency of the driving circuit is improved to the greatest extent; in addition, a high-precision input signal receiving circuit is adopted, so that the signal input reliability is improved. The driving circuit can be widely applied to driving various high-voltage SiC MOSFETs and IGBT devices.
Description
technical field [0001] The invention relates to a high-efficiency insulation and isolation SiC MOSFET gate drive circuit, which belongs to the technical field of integrated circuits. Background technique [0002] Driven by emerging industries such as smart grids, mobile communications, and new energy vehicles, power electronics application systems require further improvement of system efficiency, miniaturization, and additional functions, especially the trade-off between size, quality, power, and efficiency of system equipment , such as server power management, battery chargers, and microinverters for solar farms. With the emergence and popularization of Si-based super-junction MOSFETs and insulated gate bipolar transistors (IGBTs), silicon devices have begun to be unsuitable for some high-voltage, high-temperature, high-efficiency, and high-power-density applications due to the limitations of their own physical characteristics. occasion. Compared with Si materials, the hi...
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Login to View More IPC IPC(8): H03K17/08
CPCH03K17/08
Inventor 周德金徐宏陈珍海黄伟马君健
Owner 无锡英诺赛思科技有限公司