Manufacturing method of conductive structure, conductive structure and machine equipment
A manufacturing method and conductive structure technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., to achieve the effects of short time consumption, improved product energy efficiency, and improved directionality
Active Publication Date: 2022-05-06
YANGTZE MEMORY TECH CO LTD
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- Application Information
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Problems solved by technology
The signal integration of these large number of active components requires multi-layer high-density metal wiring. However, the resistance and parasitic capacitance brought by these metal wiring have gradually become the main factor limiting the speed of this high-density integrated circuit.
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[0027] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For simplicity, the structure after morphological transformation can be described in one figure.
[0028] It should be understood that when describing a structural relationship, when a structure or a region is referred to as being “on” or “over” another structure or another region, it may refer to being directly on another structure or another region, or on There are other structures or regions between it and another structure or another region. And, if the product is turned over, that structure, region will be "below" or "beneath" another structure, another region.
[0029] If it is intended to describe the situation of being directly on...
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The present application discloses a method for manufacturing a conductive structure, a conductive structure, and machine equipment. The method for manufacturing the conductive structure includes: depositing a seed layer on the inner surface of a guide hole and / or groove to be filled on a wafer; The upper surface and the lower surface of the wafer are heated to reflow the seed layer, so as to remove the guide hole to be filled and / or the overhanging protrusion structure at the opening of the trench and the sidewall. The conductive structure uses dual heat sources to heat from the upper and lower sides of the wafer, which makes the temperature rise of the wafer more uniform and rapid, reduces the overhanging protrusion structure at the gap and the side wall, expands the process window for the reflow of the seed layer, and reduces the wafer temperature. Due to the stress caused by the change of temperature rise, the use of dual heat sources to heat the wafer from the upper and lower sides can also significantly reduce the time-consuming process of reflowing the seed layer and improve production efficiency.
Description
technical field [0001] The invention relates to the field of semiconductor and integrated circuit manufacturing, and more specifically, to a method for manufacturing a conductive structure, a conductive structure, and machine equipment. Background technique [0002] With the gradual improvement of integration, the size of semiconductor components has been continuously reduced, and the number of transistors in high-efficiency, high-density integrated circuits has risen to tens of millions or hundreds of millions. The signal integration of these large number of active components requires multi-layer high-density metal wiring. However, the resistance and parasitic capacitance brought by these metal wiring have gradually become the main factor limiting the speed of this high-density integrated circuit. Based on the impetus of this problem, the semiconductor industry has developed from the original metal aluminum wiring process to metal copper wiring. Metal copper reduces the re...
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IPC IPC(8): H01L21/768H01L21/67H01L23/538
CPCH01L21/76897H01L21/76882H01L23/5386H01L21/67109H01L21/67115H01L21/67098
Inventor 王永平张育龙黄驰曾海武素衡李远
Owner YANGTZE MEMORY TECH CO LTD