Tin alloy plating solution

A technology of tin alloy and plating solution, which is applied in the direction of semiconductor devices, circuits, etc., can solve the problems of the appearance of the coating film and the uniformity of the film thickness, the problems of easy decomposition and precipitation of silver, etc., and achieve good appearance and uniformity of the film thickness Excellent stability, excellent bendability and reflowability

Inactive Publication Date: 2019-09-17
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the complexing agents shown in Patent Documents 1 to 4 have the problem of being easy to decompose and deposit silver when the plating bath is used for a long time or the plating solution is stored for a long time.
In addition, when the complexing agent exhibits high stability in the plating bath, it may adversely affect the appearance and uniformity of the film thickness of the plating film.

Method used

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  • Tin alloy plating solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0067] Next, examples of the present invention will be described in detail together with comparative examples.

[0068] (Building bath for SnAg plating solution)

[0069]

[0070] In the tin methanesulfonate aqueous solution, the methanesulfonic acid as the free acid, the sulfur compound of n=1 of the general formula (1) as the complexing agent, the nonionic surfactant (with the ratio of 50:50 poly A surfactant obtained by adding oxyethylene and polyoxypropylene to ethylenediamine) was mixed and dissolved, and a silver methanesulfonate solution was further added and mixed. Finally, ion-exchanged water was added to build up a SnAg plating solution having the following composition. In addition, an aqueous solution of tin methanesulfonate and an aqueous solution of silver methanesulfonate were prepared by electrolyzing a metal tin plate and a metal silver plate in an aqueous methanesulfonic acid solution, respectively.

[0071] (Composition of SnAg plating solution)

[0072]...

Embodiment 2

[0079] A SnAg plating solution was set up in the same manner as in Example 1 except that a sulfur compound of n=2 of the general formula (1) was used as a complexing agent.

Embodiment 3

[0081] The SnAg plating solution was set up in the same manner as in Example 1 except that a sulfur compound of n=3 of the general formula (1) was used as a complexing agent.

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PUM

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Abstract

A tin alloy plating solution comprising a soluble tin salt, a soluble salt of a metal more precious than tin, and a sulfide compound represented by general formula (1). In formula (1), n is 1 to 3. The metal more precious than tin is preferably silver, copper, gold, or bismuth. HO-CH<2>CH<2>-S-(CH<2>CH<2>-O-CH<2>CH<2>-S)<n>-CH<2>CH<2>-OH (1).

Description

technical field [0001] The invention relates to a tin alloy plating solution for forming a tin alloy plating film by an electroplating method. More specifically, it relates to a tin alloy plating solution suitable for forming solder bumps for semiconductor wafers and printed circuit boards. In addition, this international application claim is based on Japanese Patent Application No. 15219 (Patent Application 2017-15219) filed on January 31, 2017 and Japanese Patent Application No. 222433 (Patent Application 2017-222433) filed on November 20, 2017 Priority right of patent application 2017-15219 and patent application 2017-222433 are used in this international application. Background technique [0002] It is known that in a tin alloy plating bath (liquid) for forming a tin alloy coating film on a conductive object, such as a tin-silver alloy coating film, there is a large difference in redox potential between tin ions and other metal ions (such as silver ions) in the bath. W...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/60C25D3/56
CPCC25D3/60C25D7/12C25D3/32C25D3/56
Inventor 巽康司八十嶋司片濑琢磨
Owner MITSUBISHI MATERIALS CORP
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