IGBT junction temperature monitoring method, device and system

A monitoring device and junction temperature technology, applied in measurement devices, control systems, electrical devices, etc., can solve problems such as large and complex IGBT monitoring circuits, and achieve the effects of low cost, reduced complexity, and simplified monitoring circuit structure.

Active Publication Date: 2021-07-09
TSINGHUA UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

If the traditional device-level junction temperature monitoring method is adopted, it is obvious that the junction temperature monitoring of all IGBT devices in the converter is performed, which obviously makes the IGBT monitoring circuit complex and bulky

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  • IGBT junction temperature monitoring method, device and system
  • IGBT junction temperature monitoring method, device and system
  • IGBT junction temperature monitoring method, device and system

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Embodiment Construction

[0052] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. It should be understood that these descriptions are exemplary only, and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0053] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings. Aiming at the challenge of IGBT junction temperature monitoring pointed out above, the present invention proposes a converter-level IGBT junction temperature monitoring method based on bus voltage ringing. A large number of studies have shown that the drop rate of IGBT collector current ...

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Abstract

The invention relates to an IGBT junction temperature monitoring method, device and system. The method comprises the steps: accurately judging the monitoring time of the ringing peak voltage of a turn-off direct-current bus through employing the linear relation between the ringing peak voltage of each turn-off direct-current bus and the junction temperature of a corresponding turn-off IGBT, and employing the direction of a phase current and the initial state and the secondary state of a half-bridge arm; and acquiring the IGBT junction temperature of the converter level, and reaching high sensitivity. The IGBT junction temperature obtained by adopting the junction temperature monitoring method provided by the invention is a proper converter level parameter, and has a good application prospect in junction temperature estimation of multiple IGBTs. The monitoring method provided by the invention has the beneficial technical effects that the complexity of the monitoring circuit is reduced, the structure of the monitoring circuit is simplified, the cost is low, the installation is convenient, the resolution ratio is high, the circuit working mode is not invaded, and the method is irrelevant to the bonding wire failure.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to an IGBT junction temperature monitoring method, device and system. Background technique [0002] Power electronic converters are widely used in industrial production and life. Power electronic devices are one of the most critical components in power electronic converters. IGBT is the most widely used power electronic device. However, the failure of IGBT has always been a problem that plagues engineering applications. The failure of IGBT seriously affects the safe and stable operation of the converter system. According to statistics, IGBT failures caused by temperature rise and thermal cycle account for 55%. Therefore, the temperature monitoring of IGBT is of great significance to the condition monitoring and operation optimization of IGBT and converter. [0003] There have been a large number of research reports on the estimation of IGBT junction temperature in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/5387H02P27/12G01K13/00G01R31/26
CPCH02M7/53871H02P27/12G01K13/00G01R31/2642G01R31/2619G01R31/2601H03K2017/0806H03K17/18G01K7/015G01K2217/00H03K17/567
Inventor 张品佳杨雁勇
Owner TSINGHUA UNIV
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