Gating material, gating tube device and memory

Abstract

The embodiment of the invention provides a gating material, a gating tube device and a memory. The gating material comprises a sulfur atom and a doping atom combined with the sulfur atom in a covalent bond form. The sulfur atoms are located in the third period of the periodic table of the elements, the selenium atoms are located in the fourth period of the periodic table of the elements, the tellurium atoms are located in the fifth period of the periodic table of the elements, and the sulfur atoms have smaller atomic radius compared with the tellurium atoms or the selenium atoms, so that the sulfur atoms can form stronger covalent bonds with doping atoms; and the corresponding gating material containing the sulfur atoms is relatively good in stability and relatively large in on-state current.

Description

technical field

[0001] The present application relates to the field of electronic technology, in particular to a gate material, a gate device and a memory. Background technique

[0002] The memory is composed of a plurality of storage units, a matrix structure formed by a plurality of storage units, each storage unit includes OTS (Ovonic threshold switch, bidirectional threshold gate device), OTS is used to prevent misoperation and leakage, and to protect neighbors Operating unit effects. The OTS has the performance of a gate tube, that is, when the voltage applied to it reaches the threshold voltage, the OTS will generate a large turn-on current I on , I on It is used to drive the storage unit connected to it; and when the voltage applied to it reaches 1 / 2 threshold voltage, the OTS is in an off state, thereby disconnecting the storage unit connected to it. A memory cell connected to a value can be driven or disconnected by applying a different voltage to the OTS. [00...

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