Gating material, gating tube device and memory

A technology of gating and memory cells, which is applied in the field of electronics and can solve the problems of small on-state current and poor stability.

Pending Publication Date: 2021-07-13
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The current OTS preparation materials mostly use materials containing Te atoms or materials containing Se...

Method used

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  • Gating material, gating tube device and memory
  • Gating material, gating tube device and memory
  • Gating material, gating tube device and memory

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0051] The embodiment of the present application provides a material for making a gating tube (hereinafter referred to as the gating material), the gating tube material includes sulfur atoms and doping atoms, and the sulfur atoms and the doping atoms share a Combination in the form of valence bonds.

[0052] In the present application, the gate material is a material that can generate current when a first voltage is applied to it, but does not generate current when a second voltage is applied to it, wherein the first voltage is greater than the second voltage.

[0053] In this application, a dopant atom is an atom which can form a covalent bond with a sulfur atom.

[0054] After a lot of experiments, the applicant found a rule that the covalent compound obtained by the combination of sulfur atom and dopant atom in the form of covalent bond has the performance of a gate tube, that is, the electrical performance of the covalent compound formed by sulfur atom and dopant atom hav...

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PUM

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Abstract

The embodiment of the invention provides a gating material, a gating tube device and a memory. The gating material comprises a sulfur atom and a doping atom combined with the sulfur atom in a covalent bond form. The sulfur atoms are located in the third period of the periodic table of the elements, the selenium atoms are located in the fourth period of the periodic table of the elements, the tellurium atoms are located in the fifth period of the periodic table of the elements, and the sulfur atoms have smaller atomic radius compared with the tellurium atoms or the selenium atoms, so that the sulfur atoms can form stronger covalent bonds with doping atoms; and the corresponding gating material containing the sulfur atoms is relatively good in stability and relatively large in on-state current.

Description

technical field [0001] The present application relates to the field of electronic technology, in particular to a gate material, a gate device and a memory. Background technique [0002] The memory is composed of a plurality of storage units, a matrix structure formed by a plurality of storage units, each storage unit includes OTS (Ovonic threshold switch, bidirectional threshold gate device), OTS is used to prevent misoperation and leakage, and to protect neighbors Operating unit effects. The OTS has the performance of a gate tube, that is, when the voltage applied to it reaches the threshold voltage, the OTS will generate a large turn-on current I on , I on It is used to drive the storage unit connected to it; and when the voltage applied to it reaches 1 / 2 threshold voltage, the OTS is in an off state, thereby disconnecting the storage unit connected to it. A memory cell connected to a value can be driven or disconnected by applying a different voltage to the OTS. [00...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/8822H10N70/011
Inventor 吴全潭
Owner HUAWEI TECH CO LTD
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