4 results about "Tellurium atom" patented technology

The application provides an infrared absorption material based on doping regulation, a preparation method and an infrared detector. By introducing selenium atoms to replace tellurium atoms in a sodium gallium telluride material, the material is doped according to a doping ratio of 1:4 to 1:2 of atomic weight, the energy band structure and optical properties of the material are regulated, a new infrared absorption material is obtained, and the light absorption performance of the material in the infrared wave band is significantly improved. According to the component characteristics of the infrared absorption material, a specific preparation scheme is provided, the preparation is completed by grinding, secondary melting and annealing treatment of the set principle mass of sodium single substance, gallium single substance, tellurium single substance and selenium single substance, and the band gap and absorption intensity are accurately adjusted, and the symmetry and crystal stability of the material are also considered.

The present disclosure is characterized by being represented by general formula G1. In general formula G1, ring C is an aromatic hydrocarbon ring or a heteroaromatic ring. A11-A15 and A21-A25 are each independently selected from the group consisting of CRA and a nitrogen atom. RA represents a hydrogen atom or a substituent of various types. When RA exists in a quantity of more than one, the plurality of RAs may be the same or different from each other. X1 and X2 are each independently selected from the group consisting of an oxygen atom, a sulfur atom, a tellurium atom, a selenium atom, and NRB. RB represents a hydrogen atom or a substituent of various types. When RB exists in a quantity of more than one, the plurality of RBs may be the same or different from each other. RAs adjacent to each other or RA and RB adjacent to each other are optionally bonded to form a ring.

The invention discloses an endogenous rapid test method for tellurium brittleness sensitivity of a high-nickel alloy. The method comprises the following steps that S1, tellurium elements are added into the high-nickel alloy through a smelting method, and a base material with tellurium atoms preset inside is obtained; s2, processing and forming the base material into a tellurium-containing sample, and carrying out solid solution treatment on the tellurium-containing sample, so that tellurium atoms are completely and uniformly dissolved in the matrix dot matrix; s3, carrying out aging treatment on the tellurium-containing sample subjected to the solution treatment, and driving tellurium atoms subjected to solution treatment in a matrix to migrate to a grain boundary and form a segregation layer; and S4, performing quantitative characterization on the tellurium brittleness sensitivity of the tellurium-containing sample subjected to aging treatment through a mechanical test. Compared with the prior art, the method has the advantages that the damage state after long-time service is reproduced by changing a physical model and utilizing endogenous atom short-range migration, and the tellurium brittleness sensitivity of the high-nickel alloy can be accurately, quantitatively, safely and efficiently tested and evaluated.

An organic compound characterized by being represented by any one of general formulae G1-G6. In general formulae G1-G6, R12 to R18, R22 to R28, R31, R32, R111 to R114, R211 to R214 are each a hydrogen atom or any substituent. However, at least one of R31 and R32 is other than a hydrogen atom and a deuterium atom, and at least one of R12 to R18, R22 to R28, R111 to R114, and R211 to R214 is other than a hydrogen atom. X1 and X2 are each independently selected from the group consisting of an oxygen atom, a sulfur atom, a tellurium atom, and a selenium atom.