33 results about "Tellurium atom" patented technology

Disclosed is a field-effect transistor characterized by using a compound represented by the formula (1) below as a semiconductor material.

(In the formula (1), X¹ and X² independently represent a sulfur atom, a selenium atom or a tellurium atom; and R¹ and R² independently represent an unsubstituted or halogeno-substituted C₁-C₃₆ aliphatic hydrocarbon group.)

A sulfur-containing compound has a structure represented by formula (1):

(wherein R1 represents a hydrogen atom, a reactive terminal group, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms and a reactive terminal group or its thia derivative thereof, an aryl group, or an aralkyl group; Y represents an oxygen atom, a sulfur atom, a selenium atom, or a tellurium atom; R represents a substituted or unsubstituted bivalent hydrocarbon group having 1 to 10 carbon atoms, which may be thianated; n represents an integer of 0 to 3; X₁ is substituted for any one of groups R2 to R7 of a partial structure represented by formula (2) in which the groups R2 to R7 other than the group substituted by X₁ are independently a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; and R1 is not a group having a (meth)acryl group when Y is an oxygen atom.)

The compound has a high refractive index and high Abbe's number, and produces a resin having excellent impact resistance.

The invention relates to a tellurium sulfide polyacrylonitrile cathode material and a preparation method thereof. The preparation method comprises the following steps: commonly heating the vulcanizingagent and telluride agent to prepare tellurium sulfide, commonly heating the polyacrylonitrile, the tellurium sulfide and the catalyst to prepare the tellurium sulfide polyacrylonitrile cathode material. A main chain of the novel cathode composite material obtained through the method is carbon chain containing nitrogen atoms, the side chain is tellurium atoms or sulfur atoms; the adding of the tellurium improves the conductivity of the sulfide polyacrylonitrile cathode material, and the polarization is reduced, and the high discharging level and the excellent rate capability are acquired. Thecharging/discharging is performed on the 100mA/g current density, the average discharging potential of the material is 1.92V and more, the stable cycling capacity can reach 650mAh/g and more. The tellurium sulfide polyacrylonitrile cathode material has important promoting effect for the practicability of the lithium-sulfur battery.

The invention relates to a preparation method of a Te-Pt alloy nanowire, in particular to a preparation method of a wheat head-shaped Te-Pt alloy nanowire. The method comprises the following steps: (1) preparing a tellurium nanowire from a tellurium source, adding weighed 1-5 parts of tellurium nanowire to a beaker containing 25-50 parts of absolute ethyl alcohol in parts by weight, and carrying out magnetic stirring for 30-50 minutes for uniform dispersion; and (2) adding a required platinum source to taken dispersion solution obtained in the step (1) at the molar ratio of tellurium atoms to platinum atoms being 10 to (1-100), dispersing the solution into ultrapure water, putting the solution into a polytetrafluoroethylene lining and transferring the solution into a reaction kettle for hydrothermal reaction for 4-6 hours, namely obtaining the wheat head-shaped Te-Pt alloy nanowire product. The method is simple in preparation process; and the conditions are easy to control. According to the prepared wheat head-shaped Te-Pt alloy nanowire of which the diameter is about 25nm, the Te-Pt alloy nanowires with a large length-diameter ratio are interwoven with one another in a microstate; large active area is exposed; and the wheat head-shaped Te-Pt alloy nanowire has a regular micro-nano structure, high catalytic activity and good stability.

The invention discloses a superconductor-insulator-metal heterogeneous film material which is of a laminated structure. The superconductor-insulator-metal heterogeneous film material comprises a metal hafnium base layer, a hafnium pentatelluride film structure layer and a hafnium tritelluride film structure layer, and the laminated structure is expanded in a two-dimensional plane. A preparing method includes the steps that a proper amount of high-purity hafnium is evaporated and deposited to the surface of the transition metal hafnium base layer in a vacuum environment; annealing treatment is conducted so that deposited tellurium atoms and metal hafnium atoms on the base interact with each other to form a hafnium pentatelluride two-dimensional orderly crystalline film-shaped structure; and annealing treatment is further conducted, the surface of the formed hafnium pentatelluride two-dimensional orderly crystalline film-shaped structure is subjected to the structure change again to form hafnium tritelluride, finally, the hafnium tritelluride-hafnium pentatelluride-metal hafnium two-dimensional laminated structure is formed, and the superconductor-insulator-metal heterogeneous film material is obtained. The preparing technology is relatively simple, defects of the obtained heterogeneous-structure film are few, an interface is not likely to be polluted, and the quality of the heterogeneous-structure film is improved.

A silver halide photographic material including at least one methine dye represented by the following general formula (I) and at least one coupler represented by the following general formula (XX):

wherein X¹ and X² each represents an oxygen atom, a sulfur atom, a selenium atom, a tellurium atom, or a nitrogen atom; Y¹ represents a furan, pyrrole or thiophene ring which may be condensed with another 5- or 6-membered carbon ring or heterocycle or may have a substituent group; Y² represents an atomic group necessary for forming a benzene ring or a 5- or 6-membered unsaturated heterocycle, which may be further condensed with another 5- or 6-membered carbon ring or heterocycle or may have a substituent group; a bond between two carbon atoms by which Y¹ and Y² are each condensed with the carbon ring or the heterocycle may be a single bond or a double bond; R¹ and R² each represents a substituted or unsubstituted alkyl, aryl or heterocyclic group; L¹, L² and L³ each represents a methine group; n¹ represents 0 or 1; M¹ represents a counter ion; and m¹ represents a number of 0 or more necessary for neutralizing a charge in a molecule;

wherein Q⁵ represents a substituted or unsubstituted aryl group; Q⁶ represents a substituted or unsubstituted alkyl group; Q⁷ represents a hydrogen atom, a halogen atom, an alkoxyl group or an alkyl group; and X represents a hydrogen atom or a group to be released by a reaction with an oxidant of a developing agent.

A silver halide color photographic light-sensitive material, in which at least one of silver halide emulsion layers contains a silver halide emulsion having a silver chloride content of at least 90 mol % and being chemically sensitized with at least one compound of formula (1):

A silver halide emulsion is disclosed, comprising at least one monovalent Au(I) complex coordinated with a compound represented by the following formula (1):

R¹-Ch-²  (1)

wherein R¹ and R² each independently represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group or a heterocyclic group, R¹ and R² may combine with each other to form a 3-, 4-, 5-, 6- or 7-membered ring, and Ch represents a sulfur atom, a selenium atom or a tellurium atom.

The invention discloses applications of supramolecular interaction between a class of compounds containing selenium heterocycle or tellurium heterocycle and fullerene or a fullerene derivative in preparation of film devices, wherein the compound containing selenium heterocycle or tellurium heterocycle has chemical stability, and can form supramolecular interaction with fullerene or fullerene derivative molecules based on the large atom size and the more atom orbits of selenium atoms and tellurium atoms so as to further adjust the optical and electrical properties of the film.

The invention provides an organic transistor that has a semiconductor active layer containing a compound that can be represented by the following formula and has a molecular weight of 3,000 or less exhibits high carrier mobility (X represents an oxygen, sulfur, selenium, or tellurium atom or NR5; each Y and Z represents CR6, an oxygen, sulfur, selenium, or nitrogen atom, or NR7; the rings containing Y and Z are aromatic heterocycles; R1 or R2 may be bound to the corresponding aromatic heterocycle containing a Y and a Z via a specific divalent linking group; alternatively, R3 or R4 may be bound to the corresponding benzene ring via a specific divalent linking group; R1, R2, and R5 through R8 each represent a hydrogen atom, an alkyl group, an alkenyl group, alkynyl group, an aryl group, or a heteroaryl group; R3 and R4 each represent an alkyl group, an alkenyl group, alkynyl group, an aryl group, or a heteroaryl group; and m and n represent integers between 0 and 2, inclusive). The invention also provides a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating liquid for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for synthesizing an organic semiconductor material.

The invention provides a fused ring compound containing boron atoms and selenium or tellurium atoms. The fused ring compound is shown as a formula (I). Compared with the prior art, the condensed ring compound containing boron atoms and selenium or tellurium atoms is adopted as the light-emitting unit, on one hand, the relaxation degree of an excited state structure can be reduced by utilizing a rigid framework structure of the organic boron condensed ring compound, and therefore the narrow half-peak width is achieved; on the other hand, intersystem crossing is promoted through the heavy atom effect of selenium or tellurium atoms, the delayed fluorescence effect is activated, and therefore high luminous efficiency is achieved. Meanwhile, by changing the types of aromatic rings or heteroaromatic rings contained in the fused ring compound, the delayed fluorescence lifetime and the half-peak width can be further adjusted. Experimental results show that when the luminescent compound is used as a luminescent layer of the electroluminescent device, narrow electroluminescent half-peak width can be realized without an optical filter and a microcavity structure, and high external quantum efficiency of the device can also be realized.

A silver halide emulsion, which is chemically sensitized by a compound of formula (1):

• • wherein Ch represents a sulfur, selenium, or tellurium atom; X¹ represents NR¹ or N⁺(R²)R³Y⁻; R¹ represents a hydrogen atom or a substituent; R² and R³ each represent an alkyl group or another substituent; Y⁻ represents an anionic ion; X² represents OR⁴, N(R⁵)R⁶, or another substituent; R⁴ to R⁶ each represent a hydrogen atom or a substituent; and E is a group selected from groups represented by formula (2) to (5):
  • wherein, in formulas (2) to (5), Z represents a hydrogen atom or a substituent; A¹ and A² each represent an oxygen atom, etc.; and R¹⁰ to R¹⁶ each represent a hydrogen atom or a substituent; W represents a substituent; n is an integer from 0 to 4; L represents a divalent linking group; and EWG represents an electron withdrawing group.

The embodiment of the invention provides a gating material, a gating tube device and a memory. The gating material comprises a sulfur atom and a doping atom combined with the sulfur atom in a covalent bond form. The sulfur atoms are located in the third period of the periodic table of the elements, the selenium atoms are located in the fourth period of the periodic table of the elements, the tellurium atoms are located in the fifth period of the periodic table of the elements, and the sulfur atoms have smaller atomic radius compared with the tellurium atoms or the selenium atoms, so that the sulfur atoms can form stronger covalent bonds with doping atoms; and the corresponding gating material containing the sulfur atoms is relatively good in stability and relatively large in on-state current.

The invention provides a fused ring compound containing boron atoms, nitrogen atoms and selenium atoms or tellurium atoms. The fused ring compound is shown as a formula (I). The condensed ring compound containing boron atoms, nitrogen atoms and selenium atoms or tellurium atoms is used as a luminescent material, on one hand, the relaxation degree of an excited state structure can be reduced by using a rigid skeleton structure of the condensed ring compound, so that relatively narrow half-peak width is realized; on the other hand, anti-intersystem crossing is promoted through the heavy atom effect of selenium atoms or tellurium atoms, so that the delayed fluorescence effect is obtained, and high luminous efficiency is achieved. Meanwhile, by changing the types of aromatic rings or heteroaromatic rings contained in the fused ring compound, the delayed fluorescence lifetime and the half-peak width can be further adjusted. Experimental results show that when the luminescent compound is used as a luminescent layer of the electroluminescent device, narrow electroluminescent half-peak width can be realized without an optical filter and a microcavity structure, and high external quantum efficiency of the device can also be realized.

The invention discloses a heat treatment method for eliminating a tellurium-rich precipitate-phase defect in a tellurium-zinc-cadmium material through a two-step process. The method comprises: firstly performing heat treatment on the tellurium-zinc-cadmium material in a tellurium-rich state, so as to discharge excessive tellurium atom in tellurium-rich precipitate-phase defect from a sample, then performing cadmium-rich heat treatment on the sample, so as to enable Cd atom to enter the liquid-state tellurium-rich precipitate phase, and reducing the dimension of the tellurium-rich precipitate-phase defect by utilizing the process of the liquid-state tellurium-rich precipitate phase being subjected to supersaturation epitaxy. A routine heat treatment method enables the peripheral material of the precipitate-phase defect to generate a large amount of misfit dislocations when helps to reduce the dimension of the tellurium-rich precipitate-phase defect. Compared with the routine heat treatment method, the disclosed method does not enable the peripheral material to generate stress and misfit dislocations because the tellurium atom content in the tellurium-rich precipitate phase is controlled during tellurium-rich heat treatment. The two-step heat treatment technology is capable of effectively improving the quality of the material, and satisfies application demands on the tellurium-zinc-cadmium material as a photoelectric device or a substrate material.

The invention provides a nano material as well as a preparation method and application thereof. The nano material comprises nanosheets, the nanosheet has a chemical formula as shown in a formula I; moS < x > Te < 2-x > formula I, in which x is greater than or equal to 0 and less than 2; and the nanosheets are assembled into a tube center line hierarchical structure. The tellurium (Te) atom-doped MoSxTe2-x nanosheets are constructed, and meanwhile, the nanosheets are assembled into a'tube-center line 'nanostructure, so that the conductivity of the electrode can be improved, the volume expansion of the electrode in the circulation process can be effectively relieved, and the electrochemical performance of the electrode serving as a sodium-ion dual-ion battery negative electrode material is powerfully improved.