15 results about "Tellurium atom" patented technology

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output / transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on / off current ratio of ˜107.

The invention relates to a nitrogen-tellurium co-doped carbon-loaded cobalt-lanthanum-gallium triatomic oxygen reduction catalyst as well as a preparation method and application thereof. The catalyst comprises a carbon carrier, doped nitrogen atoms, doped tellurium atoms, supported cobalt atoms, supported lanthanum atoms and supported gallium atoms, wherein the doping proportions of nitrogen atoms and tellurium atoms in the carrier are 3.63 wt%-6.96 wt% and 2.11 wt%-3.83 wt% respectively, the loading capacity of cobalt atoms is 0.86 wt%-1.05 wt%, the loading capacity of lanthanum atoms is 0.38 wt%-0.47 wt%, and the loading capacity of gallium atoms is 0.21 wt%-0.47 wt%; in the preparation method, the nitrogen-tellurium co-doped carbon carrier is fully anchored and coordinated to Co and La atoms through a hydrothermal reaction; and through freeze drying, collapse of a carbon skeleton of the catalyst can be effectively avoided. The obtained catalyst shows good oxygen reduction activity in a solid zinc-air battery, and the peak power density of the catalyst reaches up to 1.68 mW cm <-2 >.

The application provides an infrared absorption material based on doping regulation, a preparation method and an infrared detector. By introducing selenium atoms to replace tellurium atoms in a sodium gallium telluride material, the material is doped according to a doping ratio of 1:4 to 1:2 of atomic weight, the energy band structure and optical properties of the material are regulated, a new infrared absorption material is obtained, and the light absorption performance of the material in the infrared wave band is significantly improved. According to the component characteristics of the infrared absorption material, a specific preparation scheme is provided, the preparation is completed by grinding, secondary melting and annealing treatment of the set principle mass of sodium single substance, gallium single substance, tellurium single substance and selenium single substance, and the band gap and absorption intensity are accurately adjusted, and the symmetry and crystal stability of the material are also considered.

The present disclosure is characterized by being represented by general formula G1. In general formula G1, ring C is an aromatic hydrocarbon ring or a heteroaromatic ring. A11-A15 and A21-A25 are each independently selected from the group consisting of CRA and a nitrogen atom. RA represents a hydrogen atom or a substituent of various types. When RA exists in a quantity of more than one, the plurality of RAs may be the same or different from each other. X1 and X2 are each independently selected from the group consisting of an oxygen atom, a sulfur atom, a tellurium atom, a selenium atom, and NRB. RB represents a hydrogen atom or a substituent of various types. When RB exists in a quantity of more than one, the plurality of RBs may be the same or different from each other. RAs adjacent to each other or RA and RB adjacent to each other are optionally bonded to form a ring.

The invention discloses a preparation method and application of an asymmetric CoTe double-monatomic oxygen reduction electrocatalyst. Comprising the following steps: firstly, forming a three-dimensional network structure through hydrolysis and polycondensation of a metal precursor, and calcining to obtain a metal-carbon composite material; copolymerization is carried out on cobalt ions and a nitrogen / carbon-containing precursor, and a structure that Co nano-particles are embedded into a nitrogen-doped carbon matrix is generated at a high temperature. Adding the obtained Co-NC into an absolute ethyl alcohol solution to form a suspension, adding TeCl4 and Na BH4, and carrying out a sealed high-pressure solvothermal reaction; and after the reaction is finished, cooling to room temperature, centrifugally separating, collecting, washing, drying at low temperature, and annealing at low temperature in an argon atmosphere to obtain the electrocatalyst. The heteronuclear tellurium atoms can effectively polarize charge distribution of other metal atoms through short-range regulation and control. Besides, compared with a Co or Te monatomic site, the CoTe diatomic site is beneficial to reducing a conversion energy barrier from * O to * OH through co-adsorption of the intermediate, and shows excellent alkaline ORR performance.

To provide a compound that enables shifting of the absorption wavelength to a longer wavelength while maintaining light absorption properties in A-D-A type non-fullerene acceptor materials, and to provide a composition, a film, a photoelectric conversion element, and a CMOS image sensor, each made using the compound.SOLUTION: The present invention provides a compound represented by the following general formula (1): A-D-A. In general formula (1), each A independently represents a group represented by any one of the following general formulae (2a) to (2c), and D is an electron-donating group composed of 2 to 20 rings. In general formulae (2a) to (2c), Z is an oxygen atom or a dicyanomethylene group, Q is each independently an oxygen atom, a sulfur atom, a selenium atom, or a tellurium atom, and X is a sulfur atom, a carbon atom substituted with an alkyl group or an aryl group, a silicon atom substituted with an alkyl group or an aryl group, or a germanium atom substituted with an alkyl group or an aryl group.SELECTED DRAWING: None

The invention discloses an endogenous rapid test method for tellurium brittleness sensitivity of a high-nickel alloy. The method comprises the following steps that S1, tellurium elements are added into the high-nickel alloy through a smelting method, and a base material with tellurium atoms preset inside is obtained; s2, processing and forming the base material into a tellurium-containing sample, and carrying out solid solution treatment on the tellurium-containing sample, so that tellurium atoms are completely and uniformly dissolved in the matrix dot matrix; s3, carrying out aging treatment on the tellurium-containing sample subjected to the solution treatment, and driving tellurium atoms subjected to solution treatment in a matrix to migrate to a grain boundary and form a segregation layer; and S4, performing quantitative characterization on the tellurium brittleness sensitivity of the tellurium-containing sample subjected to aging treatment through a mechanical test. Compared with the prior art, the method has the advantages that the damage state after long-time service is reproduced by changing a physical model and utilizing endogenous atom short-range migration, and the tellurium brittleness sensitivity of the high-nickel alloy can be accurately, quantitatively, safely and efficiently tested and evaluated.

An organic compound characterized by being represented by any one of general formulae G1-G6. In general formulae G1-G6, R12 to R18, R22 to R28, R31, R32, R111 to R114, R211 to R214 are each a hydrogen atom or any substituent. However, at least one of R31 and R32 is other than a hydrogen atom and a deuterium atom, and at least one of R12 to R18, R22 to R28, R111 to R114, and R211 to R214 is other than a hydrogen atom. X1 and X2 are each independently selected from the group consisting of an oxygen atom, a sulfur atom, a tellurium atom, and a selenium atom.

The present invention provides a delayed fluorescent material that imparts element characteristics including improved roll-off characteristics and lifetime. Disclosed is an organic compound represented by formula (1-1) or (1-2). In formulae (1-1) and (1-2), Ra1 to Ra4 are each independently selected from a hydrogen atom, an alkyl group, or the like. However, Ra1 is not a hydrogen atom. X is a selenium atom or a tellurium atom. Y is selected from oxygen atoms and the like. D1 is a group represented by any one of formulae (2-1) to (2-5), and D2 is a hydrogen atom or a group represented by any one of formulae (2-1) to (2-5). In formulae (2-1) to (2-5), * represents a binding site. Rb1 to Rb9 are each independently selected from a deuterium atom, an alkyl group, or the like. Z is selected from oxygen atoms and the like. E is a carbon atom, a silicon atom or a germanium atom. L, m, n, r, or s are each an integer of 0-4, o is an integer of 1-4, p and q are each an integer of 0 or 1, and t and u are each an integer of 0-5. .

The application discloses a nitrogen-tellurium co-doped carbon supported cobalt-lanthanum-gallium triatomic oxygen reduction catalyst and a preparation method and application thereof. The catalyst is composed of a carbon carrier, doped nitrogen and tellurium atoms, and supported cobalt, lanthanum and gallium atoms. The doping ratio of the nitrogen and tellurium atoms in the carrier is 3.63-6.96 wt% and 2.11-3.83 wt% respectively, the loading amount of the cobalt atom is 0.86-1.05 wt%, the loading amount of the lanthanum atom is 0.38-0.47 wt%, and the loading amount of the gallium atom is 0.21-0.47 wt%. In the preparation method, the nitrogen-tellurium co-doped carbon carrier is used to realize full anchoring coordination of Co and La atoms through a hydrothermal reaction, and the freeze-drying can effectively avoid the collapse of the carbon skeleton of the catalyst. The catalyst obtained by the application exhibits good oxygen reduction activity in a solid-state zinc-air battery, and the peak power density is up to 1.68 mW cm ‑2 .

The invention discloses a preparation method of a buffer layer assisted super-flat two-dimensional tellurene phase. The preparation method comprises the following steps: taking a gold (100) single crystal as a substrate; by adjusting the set temperature of the Knudsen diffusion furnace, the deposition amount of tellurium on a room-temperature substrate at the corresponding temperature is researched, so that the relation between the set temperature of the Knudsen diffusion furnace and the evaporation amount of tellurium is determined; the growth condition of the two-dimensional tellurium film under the conditions of specific Knudsen diffusion furnace temperature and different substrate temperatures is researched, so that the optimal substrate temperature is determined; based on the obtained set temperature of the Knudsen diffusion furnace and the temperature of the substrate, tellurium atoms are deposited on the substrate to form a buffer layer; characterizing the material by a scanning tunneling microscope to determine the formation of a buffer layer; depositing tellurium on the buffer layer to form an intermediate phase; and carrying out high-temperature annealing treatment on the intermediate phase to obtain the super-flat two-dimensional tellurium-ene phase. According to the invention, the tellurene phase which has a single atomic layer flat structure, multiple mirror symmetry, large area and high uniformity and has an n-type electronic structure is prepared.

Disclosed is a method of preparing a tellurium oxide thin film and a thin film transistor using sputtering. In detail, a method of preparing the semiconductor thin film, the method comprising: (a) providing a target comprising a chalcogen atom and a tellurium atom (Te) comprising at least one selected from the group consisting of sulfur atoms (S) and selenium atoms (Se); and (b) preparing a semiconductor thin film comprising an amorphous p-type semiconductor by co-deposition on a substrate using the target in an atmosphere of a mixed gas comprising argon gas and oxygen gas by a sputtering method. The semiconductor thin film channel layer according to the present disclosure has the effect of providing a thin film transistor (TFT) exhibiting excellent output / transfer characteristics and excellent electrical performance with high hole field effect mobility and an on / off current ratio of ˜105.

The invention belongs to the technical field of two-dimensional material growth and preparation, and particularly relates to a preparation method of a silicon tellurium heterojunction based on molecular beam epitaxial growth. Comprising the following steps: S1, sequentially carrying out argon ion etching and annealing treatment on a metal substrate; s2, silicon atoms are deposited on the surface of the metal substrate for 16 min to obtain a silicon nanobelt, and then annealing treatment is carried out; and S3, depositing tellurium atoms on the surface of the silicon nanobelt through a molecular beam epitaxy method to obtain the silicon tellurium heterojunction, wherein the deposition time is 10 minutes. A molecular beam epitaxy system is established, growth conditions can be accurately controlled, controllable growth of a two-dimensional material is achieved, the one-dimensional space of the silicon nanobelt is used as a template, a guiding effect is provided for growth of the silicon-tellurium heterojunction, tellurium atoms are promoted to be orderly arranged along the silicon nanobelt, and the silicon-tellurium heterojunction of a regular structure is formed.

To provide a method for producing a cyclic olefin copolymer which can efficiently produce a cyclic olefin copolymer by copolymerization of a norbornene monomer and a monomer containing ethylene while suppressing generation of polyethylene-like impurities.SOLUTION: A norbornene monomer and a monomer containing ethylene are polymerized in the presence of a metal-containing catalyst having a specific structure. As the metal-containing catalyst, a compound having a bond represented by M-A-Z is used. M is an atom of a Group 4 transition metal in the periodic table. A is an oxygen atom, a sulfur atom, a selenium atom or a tellurium atom. Z is a phenyl group having a substituent. In the phenyl group as Z, a hydrocarbon group which may contain a silicon atom or a germanium atom is bonded at the para position relative to the position where A is bonded.SELECTED DRAWING: None

The invention belongs to the field of two-dimensional material defect regulation and control, and discloses a regulation and control method for two-dimensional alloy anti-position adsorption defects. The regulation and control method comprises the steps that tellurium serves as a tellurium source and is placed at the gas inlet end of a quartz tube; placing the substrate spin-coated with the sodium molybdate solution and a target substrate face to face to form a space confinement reaction cavity, placing the space confinement reaction cavity at a gas outlet end, introducing Ar / H2 carrier gas, and enabling the space confinement reaction cavity to react with a tellurium source for 10-25 minutes to obtain a thin layer MoTe2; the preparation method comprises the following steps: taking sulfur powder as a sulfur source, placing the sulfur source at a gas inlet end of a quartz tube, placing MoTe2 at a gas outlet end, introducing inert carrier gas, respectively heating a high-temperature region and a low-temperature region of the quartz tube to 250-450 DEG C and 160-180 DEG C, and reacting the thin layer MoTe2 with the sulfur source for 5-10 minutes to obtain the MoSxTe2-x two-dimensional alloy with the anti-adsorption defect. Based on the chemical activity difference of sulfur / tellurium atoms, in the reaction process of sulfur and MoTe2, the atom rearrangement mechanism promotes the tellurium atoms to be adsorbed to the top of the Mo site, so that the structural integrity of the material is kept under the mild reaction condition, and the method has the advantages of low energy consumption, simplicity and convenience in operation and high controllability.