Two-step heat treatment method for eliminating defects in tellurium-rich precipitated phases in CdZnTe materials

Abstract

The invention discloses a heat treatment method for eliminating a tellurium-rich precipitate-phase defect in a tellurium-zinc-cadmium material through a two-step process. The method comprises: firstly performing heat treatment on the tellurium-zinc-cadmium material in a tellurium-rich state, so as to discharge excessive tellurium atom in tellurium-rich precipitate-phase defect from a sample, then performing cadmium-rich heat treatment on the sample, so as to enable Cd atom to enter the liquid-state tellurium-rich precipitate phase, and reducing the dimension of the tellurium-rich precipitate-phase defect by utilizing the process of the liquid-state tellurium-rich precipitate phase being subjected to supersaturation epitaxy. A routine heat treatment method enables the peripheral material of the precipitate-phase defect to generate a large amount of misfit dislocations when helps to reduce the dimension of the tellurium-rich precipitate-phase defect. Compared with the routine heat treatment method, the disclosed method does not enable the peripheral material to generate stress and misfit dislocations because the tellurium atom content in the tellurium-rich precipitate phase is controlled during tellurium-rich heat treatment. The two-step heat treatment technology is capable of effectively improving the quality of the material, and satisfies application demands on the tellurium-zinc-cadmium material as a photoelectric device or a substrate material.

Description

technical field [0001] The invention relates to a manufacturing process technology of a cadmium zinc telluride material, in particular to a two-step heat treatment method for eliminating defects of tellurium-rich precipitation phases in the cadmium zinc telluride material. Background technique [0002] CdZnTe material is an important semiconductor material. It can be used as the substrate of HgCdTe epitaxial material to prepare and produce high-performance infrared focal plane detectors, and can also be directly used in the preparation and production of high-energy sensors that sense gamma rays. Ray detector. Infrared focal plane detectors and γ-ray detectors are widely used in aerospace remote sensing, medical equipment, security inspection and military equipment. [0003] Compared with the widely used Si material and GaAs material, the defect formation energy of CdZnTe material is very low, and the thermal conductivity is very low. Most of the grown CdZnTe ingots are mult...

AI Technical Summary

Problems solved by technology

[0010] Aiming at the problem that cadmium-rich heat treatment produces dislocations on surrounding materials of tellurium-rich precipitate defects, the present invention proposes a two-step heat treatment method for tellurium-rich materials, which solves the problem of reducing the size of tellurium-rich materials while reducing the size of precipitate phase defects. Generate the problem of dislocation value increase, so as to improve the quality of tellurium-rich materials more effectively

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