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Superconductor-insulator-metal heterogeneous two-dimension crystalline film material and preparing method thereof

A thin-film material and insulator technology, applied in the field of superconductor-insulator-metal heterogeneous two-dimensional crystalline thin-film materials and their preparation, can solve the problems of heterostructure thin films with many defects, reduced performance, and easily polluted interfaces, and has reached a wide range of applications. Potential application, improved quality, fewer defects

Active Publication Date: 2017-05-24
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the commonly used method for preparing the heterostructure of two-dimensional materials is the method of exfoliation transfer stacking, but this method increases the complexity of the preparation process, and the obtained heterostructure film has many defects, and the interface is easily contaminated, resulting in its performance. reduce

Method used

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  • Superconductor-insulator-metal heterogeneous two-dimension crystalline film material and preparing method thereof
  • Superconductor-insulator-metal heterogeneous two-dimension crystalline film material and preparing method thereof
  • Superconductor-insulator-metal heterogeneous two-dimension crystalline film material and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039]The hafnium single crystal was sputtered with argon ions several times in a vacuum chamber for nearly 5 hours, and then the metal hafnium substrate was heated and annealed at 900°C for 8 minutes to obtain a clean and flat (0001) crystal plane. In a vacuum environment, an appropriate amount of high-purity tellurium is passed through a quartz crucible evaporation source to uniformly deposit metal tellurium on the surface of a clean and flat hafnium substrate (0001) kept at room temperature. Such as figure 1 The tellurium particles shown are randomly distributed on the substrate surface, as Figure 5 As shown in the scanning tunneling microscope image, the sample deposited with tellurium particles was annealed at 500°C for 15 minutes, so that the tellurium atoms covering the surface of the hafnium substrate (0001) interacted with the substrate hafnium atoms to form a hafnium pentatelluride film material ,Such as Figure 6 As shown, the film material is a periodic superstr...

Embodiment 2

[0041] The hafnium single crystal was sputtered with argon ions several times for nearly 3 hours in a vacuum chamber, and then the metal hafnium substrate was heated and kept at 900°C for 5 minutes for high-temperature annealing to obtain a clean and flat (0001) crystal plane. In a vacuum environment, an appropriate amount of high-purity tellurium is passed through a quartz crucible evaporation source to uniformly deposit metal tellurium on the surface of a clean and flat hafnium substrate (0001) kept at room temperature. Tellurium particles are randomly distributed on the surface of the substrate. The sample deposited with tellurium particles is annealed at 450°C for 10 minutes, so that the tellurium atoms covering the surface of the hafnium substrate (0001) interact with the substrate hafnium atoms to form hafnium pentatelluride The film material is a periodic superstructure that can be characterized by a scanning tunneling microscope, which also makes the tellurium particles...

Embodiment 3

[0043] The hafnium single crystal was sputtered with argon ions several times in a vacuum chamber for nearly 6 hours, and then the metal hafnium substrate was heated and kept at 900°C for 10 minutes for high temperature annealing to obtain a clean and flat (0001) crystal plane. In a vacuum environment, an appropriate amount of high-purity tellurium is passed through a quartz crucible evaporation source to uniformly deposit metal tellurium on the surface of a clean and flat hafnium substrate (0001) kept at room temperature. Tellurium particles are randomly distributed on the surface of the substrate, and the sample deposited with tellurium particles is annealed at 500°C for 10 minutes, so that the tellurium atoms covering the surface of the hafnium substrate (0001) interact with the substrate hafnium atoms to form hafnium pentatelluride The film material is a periodic superstructure that can be characterized by a scanning tunneling microscope, which also makes the tellurium part...

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Abstract

The invention discloses a superconductor-insulator-metal heterogeneous film material which is of a laminated structure. The superconductor-insulator-metal heterogeneous film material comprises a metal hafnium base layer, a hafnium pentatelluride film structure layer and a hafnium tritelluride film structure layer, and the laminated structure is expanded in a two-dimensional plane. A preparing method includes the steps that a proper amount of high-purity hafnium is evaporated and deposited to the surface of the transition metal hafnium base layer in a vacuum environment; annealing treatment is conducted so that deposited tellurium atoms and metal hafnium atoms on the base interact with each other to form a hafnium pentatelluride two-dimensional orderly crystalline film-shaped structure; and annealing treatment is further conducted, the surface of the formed hafnium pentatelluride two-dimensional orderly crystalline film-shaped structure is subjected to the structure change again to form hafnium tritelluride, finally, the hafnium tritelluride-hafnium pentatelluride-metal hafnium two-dimensional laminated structure is formed, and the superconductor-insulator-metal heterogeneous film material is obtained. The preparing technology is relatively simple, defects of the obtained heterogeneous-structure film are few, an interface is not likely to be polluted, and the quality of the heterogeneous-structure film is improved.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a superconductor-insulator-metal heterogeneous two-dimensional crystalline film material and a preparation method thereof. Background technique [0002] Graphene, as a classic representative of two-dimensional crystal materials, has become a research hotspot that has attracted worldwide attention in just ten years since it was stripped from its parent graphite in 2004 due to its unique electronic and physical properties. There is an upsurge in the exploration and research of two-dimensional crystal materials. Superposition of two-dimensional crystal materials with different physical properties is very likely to produce some new material structures and physical properties. For example, in the graphene-boron nitride heterostructure, new physical properties have been observed (Hofsch Tate Butterfly—an excellent fractal pattern describing the movement of elec...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/24C23C14/58C23C14/02
Inventor 王业亮
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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