Unlock instant, AI-driven research and patent intelligence for your innovation.

Method of determining the contribution of a processing apparatus to a substrate parameter

A technology for processing devices and substrates, which can be used in photoengraving process exposure devices, photoengraving processes of pattern surfaces, optics, etc., and can solve problems such as difficulty, time-consuming, inaccuracy, etc.

Pending Publication Date: 2021-07-23
ASML NETHERLANDS BV
View PDF20 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This is a time-consuming and difficult method that is computationally intensive and often includes significant inaccuracies

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of determining the contribution of a processing apparatus to a substrate parameter
  • Method of determining the contribution of a processing apparatus to a substrate parameter
  • Method of determining the contribution of a processing apparatus to a substrate parameter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] In this document, the terms "radiation" and "beam" are used to cover all types of electromagnetic radiation, including ultraviolet radiation (e.g. having a wavelength of 365, 248, 193, 157 or 126 nm) and EUV (extreme ultraviolet radiation, e.g. having wavelengths in the range of about 5 to 100 nm). The terms "reticle", "mask" or "patterning device" as employed in this text can be broadly interpreted to refer to a general patterning device which can be used to impart a patterned transverse pattern to an incident radiation beam. The patterned cross-section corresponds to the pattern to be produced in the target portion of the substrate. The term "light valve" may also be used in this context. Besides classical masks (transmissive or reflective, binary, phase-shifted, hybrid, etc.), other examples of such patterning devices include programmable mirror arrays and programmable LCD arrays.

[0047] figure 1 A lithographic apparatus LA is schematically depicted. The litho...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a method for determining a contribution of a processing apparatus to a fingerprint of a parameter across a first substrate, the method comprising: obtaining a delta image which relates to the difference between a first pupil image associated with inspection of a first feature on the substrate and a second pupil image associated with inspection of a second feature on the substrate, wherein the first and second features have different dose sensitivities; determining a rate of change of the difference in response to a variation of a dose used to form said first and second features; selecting a plurality of pixels comprised within the delta image having a rate of change above a predetermined threshold; and determining the contribution using the determined rate of change and the delta image restricted to the plurality of pixels.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from European application 18205693.7 filed on November 12, 2019, which is hereby incorporated by reference in its entirety. technical field [0003] The invention relates to a method for determining the contribution of a processing device to the characterization of a parameter across a first substrate. In particular, the invention relates to determining calibration metrics that can be used to calibrate a lithographic apparatus before or during use. Background technique [0004] A lithographic apparatus is a machine constructed to apply a desired pattern to a substrate. For example, lithographic apparatus may be used in the manufacture of integrated circuits (ICs). For example, a lithographic apparatus may project a pattern (also commonly referred to as a "design layout" or "design") at a patterning device (such as a mask) onto a layer of radiation-sensitive material (resist), which ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
CPCG03F7/70491G03F7/70558G03F7/70616G03F7/70625
Inventor R·阿努查多
Owner ASML NETHERLANDS BV