Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and apparatus for supplying improved gas flow to processing volume of processing chamber

A chamber, substrate processing technology, applied in chemical instruments and methods, electrical components, transportation and packaging, etc., can solve the problems of tungsten pollution, metal pollution, etc.

Pending Publication Date: 2021-07-30
APPLIED MATERIALS INC
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, hot wire dissociation of hydrogen can lead to unwanted metal contamination on the substrate surface, such as tungsten contamination, from the hot wire

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for supplying improved gas flow to processing volume of processing chamber
  • Method and apparatus for supplying improved gas flow to processing volume of processing chamber
  • Method and apparatus for supplying improved gas flow to processing volume of processing chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Embodiments described herein relate generally to the field of semiconductor manufacturing processes, and more particularly, to providing at least metastable free radical molecular species and / or free radicals to the processing volume of a processing chamber during electronic device manufacturing processing. Atomic matter methods and their associated equipment. The processing chamber may have a liner disposed therein made of quartz, sapphire, or a combination thereof. As used herein, a metastable free-radical species is a species that remains in free-radical form for more than about 10 milliseconds, such as more than about 0.1 second, or about 10 milliseconds to about 3 seconds, before complexing to a non-radical species under the processing conditions of the treatment system Between, for example about 0.1 second to about 3 seconds.

[0030] Embodiments discussed herein are also directed to introducing a gas such as H from a gas source coupled to the processing chamber....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present disclosure generally provides methods of providing at least metastable radical molecular species and / or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

Description

technical field [0001] Embodiments described herein relate generally to the field of semiconductor device fabrication processing, and more particularly, to methods and methods of providing free radical molecular species and / or free radical atomic species to a process volume of a processing chamber during electronic device fabrication processing. its related equipment. Background technique [0002] In the manufacture of electronic devices (such as semiconductor devices on substrates), remote plasma sources are often used to supply the processing space of the processing chamber (and the surface of the substrate disposed in the processing space) containing free radicals and / or ions. The activated gas of a substance. In one such process, a process gas is provided to a remote plasma source, a plasma is formed from the process gas in the remote plasma source, and the plasma is flowed into a process volume of a process chamber where a substrate The surface is exposed to plasma. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/67B01F23/10
CPCC23C16/452C23C16/45561B01F23/10B01F25/102B01F25/31423B01F25/3141B01F35/511H01J37/3244H01J37/32357C23C16/45548C23C16/45536B01F23/19B01F25/421H01L21/67017
Inventor 维希瓦·库马尔·帕迪庄野贤一卡尔蒂克·萨哈克里斯托弗·S·奥尔森阿古斯·索菲安·查德拉托宾·卡芙曼·奥斯本泰万·基姆汉瑟·劳
Owner APPLIED MATERIALS INC