Substrate of the semi-conductor-on-insulator type for radiofrequency applications

Abstract

The present invention relates to a substrate (1) of the semi-conductor-on-insulator type for radiofrequency applications, comprising: - a carrier substrate (2) of silicon, - an electrically insulating layer (3) which is arranged on the carrier substrate, - a monocrystalline layer (4) which is arranged on the electrically insulating layer, the substrate (1) mainly being characterised in that it further comprises a layer of silicon carbide SiC (5) which is arranged between the carrier substrate (2) and the electrically insulating layer (3), which has a thickness between 1 nm and 5 nm, the surface (6) of the layer of silicon carbide SiC which is at the side of the electrically insulating layer (3) being rough.

Description

technical field [0001] The present invention relates to semiconductor-on-insulator substrates for radio frequency applications. The invention also relates to a method of manufacturing such a substrate by transferring layers from a donor substrate to a receptor substrate. Background technique [0002] A semiconductor-on-insulator substrate is a multilayer structure that includes a carrier substrate, usually made of silicon, an electrically insulating layer, usually a silicon oxide layer, disposed on the substrate, and an electrically insulating layer, typically a silicon oxide layer, disposed on the insulating layer. It is an active layer and is used to manufacture semiconductor layers of electronic components. [0003] Such substrates are called SeOI substrates (SeOI is an acronym for Semiconductor On Insulator), or specifically SOI substrates when the semiconductor material is silicon (SOI is an acronym for Silicon On Insulator). [0004] The oxide layer located between t...

AI Technical Summary

Problems solved by technology

Recrystallization of the polysilicon layer, since it reduces the number of grains, also reduces the ability of said layer to trap charges

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