Novel reverse conducting IGBT device with embedded channel diode
A diode and reverse conduction technology, applied in the field of semiconductor power devices, can solve the problems of poor reverse recovery characteristics, poor gate charge characteristics, unfavorable reverse conduction IGBT performance development, etc., to reduce gate charge characteristics and improve reverse recovery The effect of the characteristic
Active Publication Date: 2021-08-06
BEIJING UNIV OF TECH +1
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Problems solved by technology
[0003] However, some reverse-conducting IGBT devices on the market have poor reverse recovery characteristics and poor gate charge characteristics, which is not conducive to the further development of reverse-conducting IGBT performance.
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[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and implementation examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0022] see figure 1 , the present invention provides a novel reverse conduction IGBT device 10 with embedded channel diodes, including emitter metal electrodes 11, gate oxides 12, IGBT polysilicon gates 13, channel diode polysilicon gates 14, two P++ bases Region 15, two N++ emitter regions 16, two P+ base regions 17, carrier storage layer 18, N-type drift region 19, N+-buffer layer 20, P+ collector region 21, N+ collector region 22 and collector metal electrode twenty three.
[0023] Specifically, the emitter metal electrode 11 includes a connection portion 111 and two protrusions 11...
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The invention relates to the technical field of semiconductor power devices, and especially relates to a novel reverse conducting IGBT device with an embedded channel diode. The device comprises an emitter metal electrode, a gate oxide, an IGBT polysilicon gate and a channel diode polysilicon gate, the emitter metal electrode comprises a connecting part and two protruding parts, the connecting part is in a flat plate shape, the two protruding parts are integrally formed at the two ends of the connecting part and located at the two ends of the gate oxide, the gate oxide is arranged between the connecting part and the two protruding parts and connected with the connecting part and the two protruding parts, and the IGBT polysilicon gate and the channel diode polysilicon gate are arranged on the surface of the gate oxide at intervals. According to the novel reverse conducting IGBT device with the embedded channel diode, the channel diode polysilicon gate is arranged, so that the reverse recovery characteristic is remarkably improved, the gate charge characteristic is reduced, the switching characteristic is improved, and meanwhile, the power loss is greatly reduced.
Description
【Technical field】 [0001] The invention relates to the technical field of semiconductor power devices, in particular to a novel reverse conduction IGBT device with embedded channel diodes. 【Background technique】 [0002] The reverse conduction IGBT is a new type of IGBT device in the world. It combines the IGBT cell and the FRD structure to obtain the reverse conduction capability, which has achieved great advantages in cost and performance, and has gradually become the research field of IGBT. focus. [0003] However, some reverse-conducting IGBT devices on the market have poor reverse recovery characteristics and poor gate charge characteristics, which is not conducive to the further development of reverse-conducting IGBT performance. [0004] Therefore, there are deficiencies in the prior art and need to be improved. 【Content of invention】 [0005] In order to overcome the above-mentioned technical problems, the present invention provides a novel reverse conduction IGBT...
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Login to View More IPC IPC(8): H01L29/423H01L29/739
CPCH01L29/7398H01L29/42356
Inventor 贾云鹏方星宇周新田李新宇吴郁胡冬青许冬梅王修中
Owner BEIJING UNIV OF TECH